Ideal PN photodiode using doping controlled WSe2-MoSe2lateral heterostructure

被引：0

作者：

Kim, Ji Eun ^{[1
]}

Kang, Won Tae ^{[1
,2
]}

Tu Vu, Van ^{[1
]}

Kim, Young Rae ^{[1
,2
]}

Shin, Yong Seon ^{[1
]}

Lee, Ilmin ^{[1
]}

Won, Ui Yeon ^{[1
]}

Lee, Boo Heung ^{[1
]}

Kim, Kunnyun ^{[3
]}

Phan, Thanh Luan ^{[1
]}

Lee, Young Hee ^{[2
,4
]}

Yu, Woo Jong ^{[1
]}

机构：

[1] Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon,Kyunggi-do 16419, Korea, Republic of

[2] Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon,Kyunggi-do 16419, Korea, Republic of

[3] Korea Electronics Technology Institute, Seongnam,13509, Korea, Republic of

[4] Department of Energy Science, Sungkyunkwan University, Suwon,Kyunggi-do 16419, Korea, Republic of

来源：

Journal of Materials Chemistry C | 2021年 / 9卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

Built-in potential - Contact interface - Controlled transitions - Ideality factors - Intrinsic property - Sequential growth - Specific detectivity - Two Dimensional (2 D);

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：3504 / 3512

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