Reprint of “Modification of the GaAs native oxide surface layer into the layer of the Ga2O3 dielectric by an Ar+ ion beam”

被引：0

作者：

Mikoushkin V.M. ^{[1
]}

Bryzgalov V.V. ^{[1
]}

Makarevskaya E.A. ^{[1
]}

Solonitsyna A.P. ^{[1
]}

Marchenko D.E. ^{[2
,3
]}

机构：

[1] Ioffe Institute, Saint-Petersburg

[2] Technische Universität Dresden, Dresden

[3] Helmholtz-Zentrum BESSY II, German-Russian Laboratory, Berlin

来源：

Surface and Coatings Technology | 2019年 / 355卷

基金：

俄罗斯科学基金会;

关键词：

Ar[!sup]+[!/sup] ion beam; Chemical composition; Ga[!sub]2[!/sub]O[!sub]3[!/sub; GaAs; Native oxide; Photoelectron spectroscopy;

D O I：

10.1016/j.surfcoat.2019.06.026

中图分类号：

学科分类号：

摘要：

Poor dielectric properties of GaAs oxides are the drawback of the GaAs-based electronics preventing using these oxides as dielectric layers. The elemental and chemical compositions of the GaAs native oxide layer slightly irradiated by Ar+ ions with the fluence Q ~1 ∗ 1014 ions/cm2 have been studied by the synchrotron-based photoelectron spectroscopy. The effect of selective and total decay of arsenic oxides followed by diffusive escape of arsenic atoms from the oxide layer has been revealed. The effect results in three-fold Ga enrichment of the upper layer of the native oxide and in strong domination (~90 at%) of the Ga2O3 phase which is known to be a quite good dielectric with the bandgap width as wide as 4.8 eV. A band diagram was obtained for the native oxide nanolayer on the n-GaAs wafer. It has been shown that this natural nanostructure has a character of a p-n heterojunction. © 2019

引用

页码：297 / 300

页数：3

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