Inverted InAlAs/InGaAs avalanche photodiode with low-high-low electric field profile

被引：0
|
作者：
NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan [1 ]
机构：
来源：
Jpn. J. Appl. Phys. | / 2 PART 2卷
关键词：
Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Indium alloys - Leakage currents - Electric fields - Gallium alloys - Semiconductor alloys - Semiconducting indium gallium arsenide
引用
收藏
相关论文
共 50 条
  • [41] Enhancement of Low Temperature Electron Mobility Due to an Electric Field in an InGaAs/InAlAs Double Quantum Well Structure
    Sahu, T.
    Palo, S.
    Nayak, P. K.
    Sahood, N.
    SEMICONDUCTORS, 2014, 48 (10) : 1318 - 1323
  • [42] A high-responsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode
    Wei, H
    Xia, FN
    Forrest, SR
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (11) : 1590 - 1592
  • [43] Kink effect in an InAs-inserted-channel InAlAs/InGaAs inverted HEMT at low temperature
    Akazaki, T
    Takayanagi, H
    Enoki, T
    IEEE ELECTRON DEVICE LETTERS, 1996, 17 (07) : 378 - 380
  • [44] Avalanche Photodiode Array Based on InGaAs/InAlAs/InP Heteroepitaxial Structures with Separated Absorption and Multiplication Regions
    N. I. Yakovleva
    K. O. Boltar’
    N. A. Irodova
    E. A. Klimanov
    Journal of Communications Technology and Electronics, 2020, 65 : 347 - 351
  • [45] Avalanche Photodiode Array Based on InGaAs/InAlAs/InP Heteroepitaxial Structures with Separated Absorption and Multiplication Regions
    Yakovleva, N. I.
    Boltar', K. O.
    Irodova, N. A.
    Klimanov, E. A.
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2020, 65 (03) : 347 - 351
  • [46] DESIGN WINDOWS FOR LOW-HIGH-LOW GAAS IMPATTS
    NAMORDI, MR
    COLEMAN, DJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 282 - 286
  • [47] Electric Field Induced Enhancement of Low Temperature Electron Mobility in Coupled InGaAs/InAlAs Double Quantum Well Structures
    Sahu, T.
    Palo, S.
    Tripathy, T. C.
    Nayak, P. K.
    FUNCTIONAL MATERIALS-BOOK, 2012, 1461 : 255 - 258
  • [48] High-Speed High-Power InAlAs/InGaAs/InP Schottky Photodiode
    Chizh, A.
    Malyshev, S.
    Mikitchuk, K.
    2015 INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS (MWP), 2015,
  • [49] Low-noise AlInAsSb avalanche photodiode
    Woodson, Madison E.
    Ren, Min
    Maddox, Scott J.
    Chen, Yaojia
    Bank, Scott R.
    Campbell, Joe C.
    APPLIED PHYSICS LETTERS, 2016, 108 (08)
  • [50] LOW-NOISE SILICON AVALANCHE PHOTODIODE
    TAKAMIYA, S
    KONDO, A
    SHIRAHATA, K
    ELECTRONICS & COMMUNICATIONS IN JAPAN, 1975, 58 (04): : 124 - 131
12345