Combinatorial ion synthesis and ion beam analyses of materials libraries on thermally grown SiO2

被引：0
|
作者：
机构：
[1] Chen, C.M.
[2] Pan, H.C.
[3] Zhu, D.Z.
[4] Hu, J.
[5] Li, M.Q.
来源：
Chen, C.M. | 1600年 / Elsevier Sequoia SA, Lausanne, Switzerland卷 / 72期
基金：
中国国家自然科学基金;
关键词：
Cathodoluminescence - Ion beams - Ion implantation - Optical properties - Physical properties - Protons - Rutherford backscattering spectroscopy - Semiconducting boron - Semiconductor doping - Silicon wafers - Single crystals - Synthesis (chemical);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We first report a method combining ion implantation and physical masking to generate material libraries of various ion-implanted samples. This approach offers rapid synthesis of samples with potential new compounds formed in the matrix, which may have specific luminescent properties. The depth-resolved cathodoluminescence (CL) measurements, accompanied with Rutherford backscattering spectrometry (RBS) and proton elastic scattering (PES) revealed some specific optical properties in the samples correlated with implanted ion distributions. These measurements are capable of nondestructively and rapidly characterizing the composition and the inhomogeneity of the combinatorial film libraries, which may determine their physical properties.
引用
收藏
相关论文
共 50 条
  • [41] Optical and ion-scattering study of SiO2 layers thermally grown on 4H-SiC
    Hayton, DJ
    Jenkins, TE
    Bailey, P
    Noakes, TCQ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (07) : L29 - L32
  • [42] ION-BEAM MIXING AT THE FE/SIO2 INTERFACE
    BATTAGLIN, G
    LORUSSO, S
    PACCAGNELLA, A
    POLATO, P
    PRINCIPI, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 126 - 129
  • [43] Ion-beam formation of nanopores and nanoclusters in SiO2
    Komarov, FF
    Vlasukova, LA
    Milchanin, OM
    Gaiduk, PI
    Yuvchenko, VN
    Grechnyi, SS
    VACUUM, 2005, 78 (2-4) : 361 - 366
  • [44] Etching characteristics of SiO2 irradiated with focused ion beam
    Sadoh, T
    Eguchi, H
    Kenjo, A
    Miyao, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 206 : 478 - 481
  • [45] ION-BEAM EXPOSURE OF SIO2 FOR PATTERN GENERATION
    SPEIDEL, R
    YOU, BZ
    OPTIK, 1984, 68 (04): : 363 - 369
  • [46] Ion beam sensitized SiO2 surface for halide ions
    Pham, MT
    Matz, W
    Moller, D
    Huller, J
    ANALYTICA CHIMICA ACTA, 1996, 320 (2-3) : 289 - 291
  • [47] Aging effect of optical properties on SiO2 films grown on Si substrates by ion beam sputtering
    Ji, Yiqin
    Liu, Huasong
    Jiang, Yugang
    Liu, Dandan
    Wang, Lishuan
    Jiang, Chenghui
    Fan, Rongwei
    Chen, Deying
    6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: ADVANCED OPTICAL MANUFACTURING TECHNOLOGIES, 2012, 8416
  • [48] Effect of the working gas of the ion-assisted source on the optical and mechanical properties of SiO2 films deposited by dual ion beam sputtering with Si and SiO2 as the starting materials
    Wu, Jean-Yee
    Lee, Cheng-Chung
    APPLIED OPTICS, 2006, 45 (15) : 3510 - 3515
  • [49] Combinatorial ion beam synthesis of semiconductor nanoclusters
    Karl, H
    Grosshans, I
    Stritzker, B
    MEASUREMENT SCIENCE AND TECHNOLOGY, 2005, 16 (01) : 32 - 40
  • [50] NONPLANAR AND NONCONTINUOUS BURIED LAYERS OF SIO2 IN SILICON FORMED BY ION-BEAM SYNTHESIS
    HEMMENT, PLF
    REESON, KJ
    ROBINSON, AK
    KILNER, JA
    CHATER, RJ
    MARSH, CD
    CHRISTENSEN, KN
    DAVIS, JR
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 766 - 769
12345