Combinatorial ion synthesis and ion beam analyses of materials libraries on thermally grown SiO2

被引：0
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作者：
机构：
[1] Chen, C.M.
[2] Pan, H.C.
[3] Zhu, D.Z.
[4] Hu, J.
[5] Li, M.Q.
来源：
Chen, C.M. | 1600年 / Elsevier Sequoia SA, Lausanne, Switzerland卷 / 72期
基金：
中国国家自然科学基金;
关键词：
Cathodoluminescence - Ion beams - Ion implantation - Optical properties - Physical properties - Protons - Rutherford backscattering spectroscopy - Semiconducting boron - Semiconductor doping - Silicon wafers - Single crystals - Synthesis (chemical);
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摘要：
We first report a method combining ion implantation and physical masking to generate material libraries of various ion-implanted samples. This approach offers rapid synthesis of samples with potential new compounds formed in the matrix, which may have specific luminescent properties. The depth-resolved cathodoluminescence (CL) measurements, accompanied with Rutherford backscattering spectrometry (RBS) and proton elastic scattering (PES) revealed some specific optical properties in the samples correlated with implanted ion distributions. These measurements are capable of nondestructively and rapidly characterizing the composition and the inhomogeneity of the combinatorial film libraries, which may determine their physical properties.
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