Fast scatterometric measurement of periodic surface structures in plasma-etching processes

被引：0

作者：

Klesse, Wolfgang Matthias ^{[1
]}

Rathsfeld, Andreas ^{[2
]}

Groß, Claudine ^{[3
]}

Malguth, Enno ^{[3
]}

Skibitzki, Oliver ^{[1
]}

Zealouk, Lahbib ^{[2
]}

机构：

[1] IHP-Leibniz-Institut für innovative Mikroelektronik, im Technologiepark 25, Frankfurt (Oder),12536, Germany

[2] Weierstrass Institute, Mohrenstr. 39, Berlin,10117, Germany

[3] LayTec AG, Seesener Str. 10-13, Berlin,10709, Germany

来源：

Measurement: Journal of the International Measurement Confederation | 2021年 / 170卷

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Inverse problems

引用

共 50 条

[21] ANISOTROPIC ETCHING OF SUBMICRONIC RESIST STRUCTURES BY RESONANT INDUCTIVE PLASMA-ETCHING
ETRILLARD, J
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[22] SURFACE MODIFICATIONS OF ELECTRONIC MATERIALS INDUCED BY PLASMA-ETCHING
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[23] HITACHI USES MICROWAVES TO CREATE FAST PLASMA-ETCHING SYSTEM
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[24] PLASMA-ETCHING WITH SURFACE MAGNETIC-FIELD CONFINEMENT
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[28] PYROMETRIC SUBSTRATE-TEMPERATURE MEASUREMENT DURING PLASMA-ETCHING
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[29] PLASMA-ETCHING OF TANTALUM POLYCIDE STRUCTURES IN A PLANAR DIODE REACTOR
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