Odd-frequency superconductivity and Meissner effect in the doped topological insulator Bi2Se3

被引:0
|
作者
Schmidt J. [1 ]
Parhizgar F. [1 ]
Black-Schaffer A.M. [1 ]
机构
[1] Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala
来源
| 1600年 / American Physical Society卷 / 101期
基金
欧盟地平线“2020”; 欧洲研究理事会;
关键词
Bismuth compounds - Electric insulators - HTTP;
D O I
10.1103/PHYSREVB.101.180512
中图分类号
学科分类号
摘要
Doped Bi2Se3 is proposed to be a nematic superconductor originating from unusual interorbital pairing. We calculate all induced superconducting pair correlations in Bi2Se3 and discover that intraorbital odd-frequency pairing clearly dominates over a significant range of frequencies. Moreover, we explore the contributions of even- and odd-frequency pairing to the Meissner effect, including separating intra- and interband processes in the response function. Contrary to expectations, and due to interband contributions, we find a diamagnetic Meissner effect from the odd-frequency pairing that stabilizes the superconducting order. © 2020 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the "https://creativecommons.org/licenses/by/4.0/"Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Funded by "https://www.kb.se/samverkan-och-utveckling/oppen-tillgang-och-bibsamkonsortiet/bibsamkonsortiet.html"Bibsam.
引用
收藏
相关论文
共 50 条
  • [31] Electronic transport studies of Ag-doped Bi2Se3 topological insulator
    Sharma, Shailja
    Kumar, Shiv
    Kumar, Amit
    Shimada, Kenya
    Yadav, C. S.
    JOURNAL OF APPLIED PHYSICS, 2022, 132 (10)
  • [32] Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals
    Cao, Helin
    Xu, Suyang
    Miotkowski, Ireneusz
    Tian, Jifa
    Pandey, Deepak
    Hasan, M. Zahid
    Chen, Yong P.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2013, 7 (1-2): : 133 - 135
  • [33] Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3
    Han, C. Q.
    Li, H.
    Chen, W. J.
    Zhu, Fengfeng
    Yao, Meng-Yu
    Li, Z. J.
    Wang, M.
    Gao, Bo F.
    Guan, D. D.
    Liu, Canhua
    Gao, C. L.
    Qian, Dong
    Jia, Jin-Feng
    APPLIED PHYSICS LETTERS, 2015, 107 (17)
  • [34] Fermi level tuning of Ag-doped Bi2Se3 topological insulator
    Uesugi, Eri
    Uchiyama, Takaki
    Goto, Hidenori
    Ota, Hiromi
    Ueno, Teppei
    Fujiwara, Hirokazu
    Terashima, Kensei
    Yokoya, Takayoshi
    Matsui, Fumihiko
    Akimitsu, Jun
    Kobayashi, Kaya
    Kubozono, Yoshihiro
    SCIENTIFIC REPORTS, 2019, 9 (1)
  • [35] Fermi level tuning of Ag-doped Bi2Se3 topological insulator
    Eri Uesugi
    Takaki Uchiyama
    Hidenori Goto
    Hiromi Ota
    Teppei Ueno
    Hirokazu Fujiwara
    Kensei Terashima
    Takayoshi Yokoya
    Fumihiko Matsui
    Jun Akimitsu
    Kaya Kobayashi
    Yoshihiro Kubozono
    Scientific Reports, 9
  • [36] Robust odd-parity superconductivity in the doped topological insulator NbxBi2Se3
    Smylie, M. P.
    Willa, K.
    Claus, H.
    Snezhko, A.
    Martin, I.
    Kwok, W. -K.
    Qiu, Y.
    Hor, Y. S.
    Bokari, E.
    Niraula, P.
    Kayani, A.
    Mishra, V.
    Welp, U.
    PHYSICAL REVIEW B, 2017, 96 (11)
  • [37] Stability of the (0001) surface of the Bi2Se3 topological insulator
    O. E. Tereshchenko
    K. A. Kokh
    V. V. Atuchin
    K. N. Romanyuk
    S. V. Makarenko
    V. A. Golyashov
    A. S. Kozhukhov
    I. P. Prosvirin
    A. A. Shklyaev
    JETP Letters, 2011, 94 : 465 - 468
  • [38] A computational investigation of topological insulator Bi2Se3 film
    Hu, Yi-Bin
    Zhao, Yong-Hong
    Wang, Xue-Feng
    FRONTIERS OF PHYSICS, 2014, 9 (06) : 760 - 767
  • [39] Topological Insulator Bi2Se3 Films on Silicon Substrates
    Plachinda, Paul
    Hopkins, Michael
    Rouvimov, Sergei
    Solanki, Raj
    JOURNAL OF ELECTRONIC MATERIALS, 2020, 49 (03) : 2191 - 2196
  • [40] Stability of the (0001) surface of the Bi2Se3 topological insulator
    Tereshchenko, O. E.
    Kokh, K. A.
    Atuchin, V. V.
    Romanyuk, K. N.
    Makarenko, S. V.
    Golyashov, V. A.
    Kozhukhov, A. S.
    Prosvirin, I. P.
    Shklyaev, A. A.
    JETP LETTERS, 2011, 94 (06) : 465 - 468