Effect of Ion Implantation on the Adhesion of Positive Diazoquinone-Novolak Photoresist Films to Single-Crystal Silicon

被引:0
|
作者
Vabishchevich, S.A. [1 ]
Brinkevich, S.D. [2 ]
Prosolovich, V.S. [2 ]
Vabishchevich, N.V. [1 ]
Brinkevich, D.I. [2 ]
机构
[1] Polotsk State University, Novopolotsk,211440, Belarus
[2] Belarusian State University, Minsk,220030, Belarus
来源
Journal of Surface Investigation | 2020年 / 14卷 / 06期
关键词
15;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1352 / 1357
相关论文
共 50 条
  • [1] Effect of Ion Implantation on the Adhesion of Positive Diazoquinone-Novolak Photoresist Films to Single-Crystal Silicon
    S. A. Vabishchevich
    S. D. Brinkevich
    V. S. Prosolovich
    N. V. Vabishchevich
    D. I. Brinkevich
    Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2020, 14 : 1352 - 1357
  • [2] Effect of Ion Implantation on the Adhesion of Positive Diazoquinone-Novolak Photoresist Films to Single-Crystal Silicon
    Vabishchevich, S. A.
    Brinkevich, S. D.
    Prosolovich, V. S.
    Vabishchevich, N. V.
    Brinkevich, D., I
    JOURNAL OF SURFACE INVESTIGATION, 2020, 14 (06): : 1352 - 1357
  • [3] Adhesion of Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon
    S. A. Vabishchevich
    S. D. Brinkevich
    N. V. Vabishchevich
    D. I. Brinkevich
    V. S. Prosolovich
    High Energy Chemistry, 2021, 55 : 495 - 501
  • [4] Adhesion of Irradiated Diazoquinone-Novolac Photoresist Films to Single-Crystal Silicon
    Vabishchevich, S. A.
    Brinkevich, S. D.
    Vabishchevich, N. V.
    Brinkevich, D. I.
    Prosolovich, V. S.
    HIGH ENERGY CHEMISTRY, 2021, 55 (06) : 495 - 501
  • [5] Adhesion of Electron-Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon
    S. A. Vabishchevich
    N. V. Vabishchevich
    S. D. Brinkevich
    D. I. Brinkevich
    V. S. Prosolovich
    S. B. Lastovskii
    High Energy Chemistry, 2024, 58 : 112 - 119
  • [6] Adhesion of Diazoquinone–Novolac Photoresist Films Implanted with Boron and Phosphorus Ions to Single-Crystal Silicon
    S. A. Vabishchevich
    S. D. Brinkevich
    D. I. Brinkevich
    V. S. Prosolovich
    High Energy Chemistry, 2020, 54 : 46 - 50
  • [7] Adhesion of Electron-Irradiated Diazoquinone-Novolac Photoresist Films to Single-Crystal Silicon
    Vabishchevich, S. A.
    Vabishchevich, N. V.
    Brinkevich, S. D.
    Brinkevich, D. I.
    Prosolovich, V. S.
    Lastovskii, S. B.
    HIGH ENERGY CHEMISTRY, 2024, 58 (01) : 112 - 119
  • [8] Adhesion of Diazoquinone-Novolac Photoresist Films Implanted with Boron and Phosphorus Ions to Single-Crystal Silicon
    Vabishchevich, S. A.
    Brinkevich, S. D.
    Brinkevich, D. I.
    Prosolovich, V. S.
    HIGH ENERGY CHEMISTRY, 2020, 54 (01) : 46 - 50
  • [9] Modeling of ion implantation in single-crystal silicon
    Nucl Instrum Methods Phys Res Sect B, 1-4 (173):
  • [10] MODELING OF ION-IMPLANTATION IN SINGLE-CRYSTAL SILICON
    TASCH, AF
    YANG, SH
    MORRIS, SJ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 102 (1-4): : 173 - 179