PTCDA adsorption on CaF2 thin films

被引:0
|
作者
Rahe P. [1 ]
机构
[1] Fachbereich Physik, Universität Osnabrück, Barbarastrasse 7, Osnabrück
来源
Rahe, Philipp | 1615年 / Beilstein-Institut Zur Forderung der Chemischen Wissenschaften卷 / 11期
关键词
3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA); calcium difluoride; decoupling; insulating thin film; scanning tunnelling microscopy;
D O I
10.3762/BJNANO.11.144
中图分类号
学科分类号
摘要
Thin insulating films are commonly employed for the electronic decoupling of molecules as they enable a preservation of the intrinsic molecular electronic functionality. Here, the molecular properties of 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) adsorbed on insulating CaF2 thin films that were grown on Si(111) surfaces are studied. Scanning tunnelling microscopy is used to compare the properties of PTCDA molecules adsorbed on a partly CaF1-covered Si(111) surface with deposition on thicker CaF2/CaF1/Si(111) films. The identification of mostly single molecules on the CaF1/Si(111) interface layer is explained by the presence of atomic-size defects within this layer. Geometry-optimisation calculations using density functional theory reveal a geometry on CaF2(111) of nearly flat-lying PTCDA molecules with two oxygen atoms displaced towards calcium surface ions. This geometry is in agreement with the experimental observations. © 2020 Rahe; licensee Beilstein-Institut. All Rights Reserved.
引用
收藏
页码:1615 / 1622
页数:7
相关论文
共 50 条
  • [21] Synthesis and Characterization of CaF2 Thin Films Doped with Tb3+
    A. Méndez-Blas
    E. López-Cruz
    G. Palestino
    M. E. Calixto
    MRS Advances, 2017, 2 (3) : 147 - 152
  • [22] Boron surfactant enhanced growth of thin Si films on CaF2/Si
    Wang, CR
    Müller, BH
    Bugiel, E
    Wietler, T
    Bierkandt, M
    Hofmann, KR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (06): : 2246 - 2250
  • [23] TIN DIOXIDE WITH THE CAF2 STRUCTURE IN THIN TIN OXIDE-FILMS
    PENEVA, SK
    RUDARSKA, RK
    NIHTIANOVA, DD
    AVRAMOV, I
    THIN SOLID FILMS, 1984, 112 (03) : 247 - 255
  • [24] Femtosecond laser ablation of CaF2: Plasma characterization and thin films deposition
    De Bonis, A.
    Santagata, A.
    Galasso, A.
    Sansone, M.
    Teghil, R.
    APPLIED SURFACE SCIENCE, 2014, 302 : 145 - 148
  • [25] Ion beam irradiation of thin CaF2 films:: a study of lithographic properties
    Zehe, A
    Ramírez, A
    THIN SOLID FILMS, 2000, 373 (1-2) : 46 - 48
  • [26] Surfactant enhanced growth of thin Si films on CaF2/Si(111)
    Wang, CR
    Müller, BH
    Bugiel, E
    Hofmann, KR
    APPLIED SURFACE SCIENCE, 2003, 211 (1-4) : 203 - 208
  • [27] On the growth of Co-doped BaFe2As2 thin films on CaF2
    Langer, Marco
    Meyer, Sven
    Ackermann, Kai
    Gruenewald, Lukas
    Kauffmann-Weiss, Sandra
    Aswartham, Saicharan
    Wurmehl, Sabine
    Haenisch, Jens
    Holzapfel, Bernhard
    31ST INTERNATIONAL SYMPOSIUM ON SUPERCONDUCTIVITY (ISS2018), 2019, 1293
  • [28] Effect of heating rate on the responses of CaF2:Cu, CaF2:Tm, CaF2:Dy and CaF2:Mn
    Pradhan, AS
    SOLID STATE DOSIMETRY, PTS 1 AND 2, PROCEEDINGS, 2002, : 289 - 292
  • [29] Effect of heating rate on the responses of CaF2:Cu, CaF2:Tm, CaF2:Dy and CaF2:Mn
    Pradhan, AS
    RADIATION PROTECTION DOSIMETRY, 2002, 100 (1-4) : 289 - 292
  • [30] Ion transport in nanocrystalline CaF2 films
    Usiskin, Robert
    Sigle, Wilfried
    Kelsch, Marion
    van Aken, Peter A.
    Maier, Joachim
    JOURNAL OF APPLIED PHYSICS, 2021, 130 (10)