Determination of dislocation density in GaN/sapphire layers using XRD measurements carried out from the edge of the sample

被引：0

作者：

Serafińczuk, Jaroslaw ^{[1
,2
]}

Moszak, Karolina ^{[1
]}

Pawlaczyk, Lukasz ^{[2
]}

Olszewski, Wojciech ^{[1
]}

Pucicki, Damian ^{[1
,2
]}

Kudrawiec, Robert ^{[1
,3
]}

Hommel, Detlef ^{[1
,4
]}

机构：

[1] LUKASIEWICZ Research Network, PORT Polish Center for Technology Development, Stablowicka 147, Wroclaw,54-066, Poland

[2] Department of Nanometrology, Wroclaw University of Science and Technology, Janiszewskiego 11/17, Wroclaw,50-372, Poland

[3] Department of Semiconductor Materials Engineering, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, Wroclaw,50-370, Poland

[4] Institute of Experimental Physics, University of Wroclaw, Pl. Maxa Borna 9, Wroclaw,50-204, Poland

来源：

Journal of Alloys and Compounds | 2020年 / 825卷

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

共 34 条

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[32] A novel method for the determination of the full energetic distribution of interface state density in metal/insulator/GaN structures from capacitance - voltage and photocapacitance - light intensity measurements
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[33] Determination of hand deposited gunshot residue obtained from shootings carried out with handgun cartridges produced by Turkish machinery and chemistry foundation using flameless atomic absorption spectrophotometer
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Uner, HB
Koc, S
Tok, M
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FORENSIC SCIENCE INTERNATIONAL, 2003, 136 : 147 - 147
[34] Determination of 3D flame surface density variables from 2D measurements: Validation using direct numerical simulation
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Hawkes, Evatt R.
PHYSICS OF FLUIDS, 2011, 23 (06)

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