Determination of dislocation density in GaN/sapphire layers using XRD measurements carried out from the edge of the sample

被引：0

作者：

Serafińczuk, Jaroslaw ^{[1
,2
]}

Moszak, Karolina ^{[1
]}

Pawlaczyk, Lukasz ^{[2
]}

Olszewski, Wojciech ^{[1
]}

Pucicki, Damian ^{[1
,2
]}

Kudrawiec, Robert ^{[1
,3
]}

Hommel, Detlef ^{[1
,4
]}

机构：

[1] LUKASIEWICZ Research Network, PORT Polish Center for Technology Development, Stablowicka 147, Wroclaw,54-066, Poland

[2] Department of Nanometrology, Wroclaw University of Science and Technology, Janiszewskiego 11/17, Wroclaw,50-372, Poland

[3] Department of Semiconductor Materials Engineering, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, Wroclaw,50-370, Poland

[4] Institute of Experimental Physics, University of Wroclaw, Pl. Maxa Borna 9, Wroclaw,50-204, Poland

来源：

Journal of Alloys and Compounds | 2020年 / 825卷

关键词：

D O I：

暂无

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学科分类号：

摘要：

Journal article (JA)

引用

共 34 条

[1] Determination of dislocation density in GaN/sapphire layers using XRD measurements carried out from the edge of the sample
Serafinczuk, Jaroslaw
Moszak, Karolina
Pawlaczyk, Lukasz
Olszewski, Wojciech
Pucicki, Damian
Kudrawiec, Robert
Hommel, Detlef
JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 825
[2] Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching
Wellmann, Peter J.
Sakwe, Sakwe A.
Oehlschlaeger, Felix
Hoffmann, Veit
Zeimer, Ute
Knauer, Arne
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (05) : 955 - 958
[3] Reduction of dislocation density in GaN films on sapphire using AlN interlayers
Chaudhuri, J
George, JT
Kolske, DD
Wickenden, AE
Henry, RL
Rek, Z
JOURNAL OF MATERIALS SCIENCE, 2002, 37 (07) : 1449 - 1453
[4] Reduction of dislocation density in GaN films on sapphire using AIN interlayers
J. Chaudhuri
J. T. George
D. D. Kolske
A. E. Wickenden
R. L. Henry
Z. Rek
Journal of Materials Science, 2002, 37 : 1449 - 1453
[5] Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
Yamane, Keisuke
Ueno, Motohisa
Uchida, Katsumi
Furuya, Hiroshi
Okada, Narihito
Tadatomo, Kazuyuki
APPLIED PHYSICS EXPRESS, 2012, 5 (09)
[6] Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire
Kappers, M. J.
Moram, M. A.
Rao, D. V. Sridhara
McAleese, C.
Humphreys, C. J.
JOURNAL OF CRYSTAL GROWTH, 2010, 312 (03) : 363 - 367
[7] Determination of dislocation density from hardness measurements in metals
Graca, S.
Colaco, R.
Carvalho, R. A.
Vilar, R.
MATERIALS LETTERS, 2008, 62 (23) : 3812 - 3814
[8] Accurate Determination of Dislocation Density in GaN Using Chemical Mechanical Polishing
Kumar, Purushottam
Rao, Suhas
Lee, Jinhyung
Singh, Deepika
Singh, Rajiv K.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (01) : P1 - P4
[9] Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate
Shin, Hui-Youn
Kwon, S. K.
Chang, Y. I.
Cho, M. J.
Park, K. H.
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (17) : 4167 - 4170
[10] Effect of dislocation density on superluminescence of GaN epitaxial layers grown by organometallic gas-phase epitaxy on sapphire substrates
Oleshko V.I.
Li Z.
Applied Physics, 2024, (03): : 58 - 62

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