Si doping-induced phase control, formation of p-type and n-type GaAs nanowires

被引：0

作者：

Kang, Yubin ^{[1
]}

Tang, Jilong ^{[1
]}

Azad, Fahad ^{[2
]}

Zhu, Xiaotian ^{[1
]}

Chen, Xue ^{[1
]}

Chu, Xueying ^{[1
]}

Wang, Dengkui ^{[1
]}

Fang, Xuan ^{[1
]}

Fang, Dan ^{[1
]}

Lin, Fengyuan ^{[1
]}

Li, Kexue ^{[1
]}

Wang, Xiaohua ^{[1
]}

Wei, Zhipeng ^{[1
]}

机构：

[1] State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun,130022, China

[2] School of Natural Sciences (SNS), National University of Sciences and Technology (NUST), H-12 Islamabad, Islamabad,44000, Pakistan

来源：

Vacuum | 2022年 / 195卷

基金：

中国国家自然科学基金;

关键词：

45;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[41] THERMALLY INDUCED DEFECTS IN N-TYPE AND P-TYPE SILICON
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