2D MoS2-Based Threshold Switching Memristor for Artificial Neuron

被引：0
|
作者：
Dev, Durjoy [1 ,4 ]
Krishnaprasad, Adithi [1 ,4 ]
Shawkat, Mashiyat S. [1 ,4 ]
He, Zhezhi [2 ]
Das, Sonali [1 ,4 ]
Fan, Deliang [2 ]
Chung, Hee-Suk [3 ]
Jung, Yeonwoong [1 ,4 ,5 ]
Roy, Tania [1 ,4 ,5 ]
机构：
[1] Nanoscience Technology Center, University of Central Florida, Orlando,FL,32826, United States
[2] School of Electrical Computer and Energy Engineering, Arizona State University, Tempe,AZ,85281, United States
[3] Analytical Research Division, Korea Basic Science Institute, Jeonju,54907, Korea, Republic of
[4] Department of Electrical and Computer Engineering, University of Central Florida, Orlando,FL,32826, United States
[5] Department of Materials Science and Engineering, University of Central Florida, Orlando,FL,32826, United States
来源：
IEEE Electron Device Letters | 2020年 / 41卷 / 06期
基金：
美国国家科学基金会;
关键词：
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：936 / 939
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