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- [21] Large anisotropy of electrical conductivity induced high thermoelectric performance of p-type CrSi2JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 581 : 413 - 417Zhang, Xiao Jing论文数: 0 引用数: 0 h-index: 0机构: Henan Univ, Sch Phys & Elect, Inst Computat Mat Sci, Kaifeng 475004, Peoples R China Henan Univ, Sch Phys & Elect, Inst Computat Mat Sci, Kaifeng 475004, Peoples R ChinaYan, Yu Li论文数: 0 引用数: 0 h-index: 0机构: Henan Univ, Sch Phys & Elect, Inst Computat Mat Sci, Kaifeng 475004, Peoples R China Henan Univ, Sch Phys & Elect, Inst Computat Mat Sci, Kaifeng 475004, Peoples R ChinaWang, Yuan Xu论文数: 0 引用数: 0 h-index: 0机构: Henan Univ, Sch Phys & Elect, Inst Computat Mat Sci, Kaifeng 475004, Peoples R China Guizhou Normal Coll, Inst Appl Phys, Guizhou Prov Key Lab Computat Nanomat Sci, Guiyang 550018, Peoples R China Henan Univ, Sch Phys & Elect, Inst Computat Mat Sci, Kaifeng 475004, Peoples R China
- [22] Wafer-scale MoS2 for P-type field effect transistor arrays and defects-related electrical characteristicsTHIN SOLID FILMS, 2021, 732Wei, Junqing论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Minist Educ, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices,Engn, Tianjin 300384, Peoples R China Tianjin Univ Technol, Minist Educ, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices,Engn, Tianjin 300384, Peoples R ChinaDi, Xichao论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Minist Educ, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices,Engn, Tianjin 300384, Peoples R China Tianjin Univ Technol, Minist Educ, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices,Engn, Tianjin 300384, Peoples R ChinaWang, Fang论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Minist Educ, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices,Engn, Tianjin 300384, Peoples R China Tianjin Univ Technol, Minist Educ, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices,Engn, Tianjin 300384, Peoples R ChinaShan, Xin论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Minist Educ, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices,Engn, Tianjin 300384, Peoples R China Tianjin Univ Technol, Minist Educ, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices,Engn, Tianjin 300384, Peoples R ChinaZhang, Baojun论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Minist Educ, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices,Engn, Tianjin 300384, Peoples R China Tianjin Univ Technol, Minist Educ, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices,Engn, Tianjin 300384, Peoples R ChinaXin, Baojuan论文数: 0 引用数: 0 h-index: 0机构: Nankai Univ, Sch Elect Informat & Opt Engn, Tianjin 300350, Peoples R China Tianjin Univ Technol, Minist Educ, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices,Engn, Tianjin 300384, Peoples R ChinaWang, Weihua论文数: 0 引用数: 0 h-index: 0机构: Nankai Univ, Sch Elect Informat & Opt Engn, Tianjin 300350, Peoples R China Tianjin Univ Technol, Minist Educ, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices,Engn, Tianjin 300384, Peoples R ChinaSong, Zhitang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China Tianjin Univ Technol, Minist Educ, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices,Engn, Tianjin 300384, Peoples R ChinaZhang, Kailiang论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ Technol, Minist Educ, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices,Engn, Tianjin 300384, Peoples R China Tianjin Univ Technol, Minist Educ, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices,Engn, Tianjin 300384, Peoples R China
- [23] Wafer-scale MoS2 for P-type field effect transistor arrays and defects-related electrical characteristicsThin Solid Films, 2021, 732Wei, Junqing论文数: 0 引用数: 0 h-index: 0机构: Tianjin Key Laboratory of Film Electronic & Communication Devices, Ministry of Education Engineering Research Center of Optoelectronic Devices & Communication Technology, School of Electrical & Electronic Engineering, Tianjin University of Technology, Tian Tianjin Key Laboratory of Film Electronic & Communication Devices, Ministry of Education Engineering Research Center of Optoelectronic Devices & Communication Technology, School of Electrical & Electronic Engineering, Tianjin University of Technology, TianDi, Xichao论文数: 0 引用数: 0 h-index: 0机构: Tianjin Key Laboratory of Film Electronic & Communication Devices, Ministry of Education Engineering Research Center of Optoelectronic Devices & Communication Technology, School of Electrical & Electronic Engineering, Tianjin University of Technology, Tian Tianjin Key Laboratory of Film Electronic & Communication Devices, Ministry of Education Engineering Research Center of Optoelectronic Devices & Communication Technology, School of Electrical & Electronic Engineering, Tianjin University of Technology, TianWang, Fang论文数: 0 引用数: 0 h-index: 0机构: Tianjin Key Laboratory of Film Electronic & Communication Devices, Ministry of Education Engineering Research Center of Optoelectronic Devices & Communication Technology, School of Electrical & Electronic Engineering, Tianjin University of Technology, Tian Tianjin Key Laboratory of Film Electronic & Communication Devices, Ministry of Education Engineering Research Center of Optoelectronic Devices & Communication Technology, School of Electrical & Electronic Engineering, Tianjin University of Technology, TianShan, Xin论文数: 0 引用数: 0 h-index: 0机构: Tianjin Key Laboratory of Film Electronic & Communication Devices, Ministry of Education Engineering Research Center of Optoelectronic Devices & Communication Technology, School of Electrical & Electronic Engineering, Tianjin University of Technology, Tian Tianjin Key Laboratory of Film Electronic & Communication Devices, Ministry of Education Engineering Research Center of Optoelectronic Devices & Communication Technology, School of Electrical & Electronic Engineering, Tianjin University of Technology, TianZhang, Baojun论文数: 0 引用数: 0 h-index: 0机构: Tianjin Key Laboratory of Film Electronic & Communication Devices, Ministry of Education Engineering Research Center of Optoelectronic Devices & Communication Technology, School of Electrical & Electronic Engineering, Tianjin University of Technology, Tian Tianjin Key Laboratory of Film Electronic & Communication Devices, Ministry of Education Engineering Research Center of Optoelectronic Devices & Communication Technology, School of Electrical & Electronic Engineering, Tianjin University of Technology, TianXin, Baojuan论文数: 0 引用数: 0 h-index: 0机构: School of Electronic Information and Optical Engineering, Nankai University, Tianjin,300350, China Tianjin Key Laboratory of Film Electronic & Communication Devices, Ministry of Education Engineering Research Center of Optoelectronic Devices & Communication Technology, School of Electrical & Electronic Engineering, Tianjin University of Technology, TianWang, Weihua论文数: 0 引用数: 0 h-index: 0机构: School of Electronic Information and Optical Engineering, Nankai University, Tianjin,300350, China Tianjin Key Laboratory of Film Electronic & Communication Devices, Ministry of Education Engineering Research Center of Optoelectronic Devices & Communication Technology, School of Electrical & Electronic Engineering, Tianjin University of Technology, TianSong, Zhitang论文数: 0 引用数: 0 h-index: 0机构: Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai,200050, China Tianjin Key Laboratory of Film Electronic & Communication Devices, Ministry of Education Engineering Research Center of Optoelectronic Devices & Communication Technology, School of Electrical & Electronic Engineering, Tianjin University of Technology, TianZhang, Kailiang论文数: 0 引用数: 0 h-index: 0机构: Tianjin Key Laboratory of Film Electronic & Communication Devices, Ministry of Education Engineering Research Center of Optoelectronic Devices & Communication Technology, School of Electrical & Electronic Engineering, Tianjin University of Technology, Tian Tianjin Key Laboratory of Film Electronic & Communication Devices, Ministry of Education Engineering Research Center of Optoelectronic Devices & Communication Technology, School of Electrical & Electronic Engineering, Tianjin University of Technology, Tian
- [24] Interfacial engineering effect and bipolar conduction of Ni- doped MoS2 nanostructures for thermoelectric applicationJOURNAL OF ALLOYS AND COMPOUNDS, 2022, 895 : 1 - 10Jenisha, M. Arockia论文数: 0 引用数: 0 h-index: 0机构: SRM Inst Sci & Technol, Nanotechnol Res Ctr NRC, Fac Engn & Technol, Kattankulathur 603203, Tamil Nadu, India SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Funct Mat & Energy Devices Lab, Kattankulathur 603203, Tamil Nadu, India SRM Inst Sci & Technol, Nanotechnol Res Ctr NRC, Fac Engn & Technol, Kattankulathur 603203, Tamil Nadu, IndiaKavirajan, S.论文数: 0 引用数: 0 h-index: 0机构: SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Funct Mat & Energy Devices Lab, Kattankulathur 603203, Tamil Nadu, India SRM Inst Sci & Technol, Nanotechnol Res Ctr NRC, Fac Engn & Technol, Kattankulathur 603203, Tamil Nadu, IndiaHarish, S.论文数: 0 引用数: 0 h-index: 0机构: SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Funct Mat & Energy Devices Lab, Kattankulathur 603203, Tamil Nadu, India SRM Inst Sci & Technol, Nanotechnol Res Ctr NRC, Fac Engn & Technol, Kattankulathur 603203, Tamil Nadu, IndiaArchana, J.论文数: 0 引用数: 0 h-index: 0机构: SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Funct Mat & Energy Devices Lab, Kattankulathur 603203, Tamil Nadu, India SRM Inst Sci & Technol, Nanotechnol Res Ctr NRC, Fac Engn & Technol, Kattankulathur 603203, Tamil Nadu, IndiaKamalabharathi, K.论文数: 0 引用数: 0 h-index: 0机构: SRM Inst Sci & Technol, Nanotechnol Res Ctr NRC, Fac Engn & Technol, Kattankulathur 603203, Tamil Nadu, India SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Kattankulathur 603203, Tamil Nadu, India SRM Inst Sci & Technol, Nanotechnol Res Ctr NRC, Fac Engn & Technol, Kattankulathur 603203, Tamil Nadu, IndiaKumar, E. Senthil论文数: 0 引用数: 0 h-index: 0机构: SRM Inst Sci & Technol, Nanotechnol Res Ctr NRC, Fac Engn & Technol, Kattankulathur 603203, Tamil Nadu, India SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Kattankulathur 603203, Tamil Nadu, India SRM Inst Sci & Technol, Nanotechnol Res Ctr NRC, Fac Engn & Technol, Kattankulathur 603203, Tamil Nadu, IndiaNavaneethan, M.论文数: 0 引用数: 0 h-index: 0机构: SRM Inst Sci & Technol, Nanotechnol Res Ctr NRC, Fac Engn & Technol, Kattankulathur 603203, Tamil Nadu, India SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Funct Mat & Energy Devices Lab, Kattankulathur 603203, Tamil Nadu, India SRM Inst Sci & Technol, Nanotechnol Res Ctr NRC, Fac Engn & Technol, Kattankulathur 603203, Tamil Nadu, India
- [25] Characteristics of p-Type Conduction in P-Doped MoS2 by Phosphorous Pentoxide during Chemical Vapor DepositionNANOMATERIALS, 2019, 9 (09)Lee, Jae Sang论文数: 0 引用数: 0 h-index: 0机构: Hanyang Univ, Dept Phys, Seoul 04763, South Korea Hanyang Univ, Res Inst Nat Sci, Seoul 04763, South Korea Hanyang Univ, Dept Phys, Seoul 04763, South Korea论文数: 引用数: h-index:机构:Kim, Tae Young论文数: 0 引用数: 0 h-index: 0机构: Hanyang Univ, Dept Phys, Seoul 04763, South Korea Hanyang Univ, Res Inst Nat Sci, Seoul 04763, South Korea Hanyang Univ, Dept Phys, Seoul 04763, South KoreaKim, Yoon Sok论文数: 0 引用数: 0 h-index: 0机构: Hanyang Univ, Dept Phys, Seoul 04763, South Korea Hanyang Univ, Res Inst Nat Sci, Seoul 04763, South Korea Hanyang Univ, Dept Phys, Seoul 04763, South KoreaKim, Eun Kyu论文数: 0 引用数: 0 h-index: 0机构: Hanyang Univ, Dept Phys, Seoul 04763, South Korea Hanyang Univ, Res Inst Nat Sci, Seoul 04763, South Korea Hanyang Univ, Dept Phys, Seoul 04763, South Korea
- [26] p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic EffectADVANCED MATERIALS, 2016, 28 (17) : 3391 - 3398Xue, Fei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R ChinaChen, Libo论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R ChinaChen, Jian论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R ChinaLiu, Jingbin论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R ChinaWang, Longfei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R ChinaChen, Mengxiao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R ChinaPang, Yaokun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R ChinaYang, Xiaonian论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R ChinaGao, Guoyun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R ChinaZhai, Junyi论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R ChinaWang, Zhong Lin论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China
- [27] Electronic sensitization enhanced p-type ammonia gas sensing of zinc doped MoS2/RGO compositesANALYTICA CHIMICA ACTA, 2023, 1248Sibi, S. P. Linto论文数: 0 引用数: 0 h-index: 0机构: PSG Coll Arts & Sci, Dept Phys, Coimbatore 641014, Tamil Nadu, India PSG Coll Arts & Sci, Dept Phys, Coimbatore 641014, Tamil Nadu, IndiaRajkumar, M.论文数: 0 引用数: 0 h-index: 0机构: PSG Coll Arts & Sci, Dept Phys, Coimbatore 641014, Tamil Nadu, India PSG Coll Arts & Sci, Dept Phys, Coimbatore 641014, Tamil Nadu, IndiaGovindharaj, Kamaraj论文数: 0 引用数: 0 h-index: 0机构: Bharathiar Univ, Dept Nanosci & Technol, Adv Mat & Devices Lab AMDL, Coimbatore 641046, Tamil Nadu, India PSG Coll Arts & Sci, Dept Phys, Coimbatore 641014, Tamil Nadu, IndiaMobika, J.论文数: 0 引用数: 0 h-index: 0机构: Nandha Engn Coll, Dept Phys, Erode 638052, Tamil Nadu, India PSG Coll Arts & Sci, Dept Phys, Coimbatore 641014, Tamil Nadu, IndiaPriya, V. Nithya论文数: 0 引用数: 0 h-index: 0机构: PSG Coll Arts & Sci, Dept Phys, Coimbatore 641014, Tamil Nadu, India PSG Coll Arts & Sci, Dept Phys, Coimbatore 641014, Tamil Nadu, IndiaKumar, R. T. Rajendra论文数: 0 引用数: 0 h-index: 0机构: Bharathiar Univ, Dept Nanosci & Technol, Adv Mat & Devices Lab AMDL, Coimbatore 641046, Tamil Nadu, India PSG Coll Arts & Sci, Dept Phys, Coimbatore 641014, Tamil Nadu, India
- [28] Phosphorous doped p-type MoS2 polycrystalline thin films via direct sulfurization of Mo filmAIP ADVANCES, 2018, 8 (02)Momose, Tomohiro论文数: 0 引用数: 0 h-index: 0机构: Shizuoka Univ, Grad Sch Integrated Sci & Technol, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan Shizuoka Univ, Grad Sch Integrated Sci & Technol, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, JapanNakamura, Atsushi论文数: 0 引用数: 0 h-index: 0机构: Shizuoka Univ, Grad Sch Integrated Sci & Technol, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan Shizuoka Univ, Grad Sch Integrated Sci & Technol, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, JapanDaniel, Moraru论文数: 0 引用数: 0 h-index: 0机构: Shizuoka Univ, Grad Sch Integrated Sci & Technol, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan Shizuoka Univ, Grad Sch Integrated Sci & Technol, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, JapanShimomura, Masaru论文数: 0 引用数: 0 h-index: 0机构: Shizuoka Univ, Grad Sch Integrated Sci & Technol, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan Shizuoka Univ, Grad Sch Integrated Sci & Technol, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan
- [29] Tuning the thermoelectric properties of ZnO/MoS2/carbon fabric via interface-induced energy filtering effect for wearable thermoelectric applicationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2024, 35 (15)Prasanna, C. Suresh论文数: 0 引用数: 0 h-index: 0机构: SRM Inst Sci & Technol, Nanotechnol Res Ctr, Kattankulathur 603203, Tamilnadu, India SRM Inst Sci & Technol, Fac Engn & Technol, Dept Phys & Nanotechnol, Funct Mat & Energy Devices Lab, Kattankulathur 603203, Tamilnadu, India SRM Inst Sci & Technol, Nanotechnol Res Ctr, Kattankulathur 603203, Tamilnadu, India论文数: 引用数: h-index:机构:Eswaran, Senthil Kumar论文数: 0 引用数: 0 h-index: 0机构: SRM Inst Sci & Technol, Nanotechnol Res Ctr, Kattankulathur 603203, Tamilnadu, India SRM Inst Sci & Technol, Nanotechnol Res Ctr, Kattankulathur 603203, Tamilnadu, IndiaIkeda, H.论文数: 0 引用数: 0 h-index: 0机构: Shizuoka Univ, Grad Sch Sci & Technol, 3-5-1 Johoku,Naka Ku, Hamamatsu, Shizuoka 4328011, Japan Shizuoka Univ, Res Inst Elect, 3-5-1 Johoku,Naka Ku, Hamamatsu, Shizuoka 4328011, Japan SRM Inst Sci & Technol, Nanotechnol Res Ctr, Kattankulathur 603203, Tamilnadu, IndiaNavaneethan, M.论文数: 0 引用数: 0 h-index: 0机构: SRM Inst Sci & Technol, Nanotechnol Res Ctr, Kattankulathur 603203, Tamilnadu, India SRM Inst Sci & Technol, Fac Engn & Technol, Dept Phys & Nanotechnol, Funct Mat & Energy Devices Lab, Kattankulathur 603203, Tamilnadu, India SRM Inst Sci & Technol, Nanotechnol Res Ctr, Kattankulathur 603203, Tamilnadu, India
- [30] Charge-Transfer-Induced p-Type Channel in MoS2 Flake Field Effect TransistorsACS APPLIED MATERIALS & INTERFACES, 2018, 10 (04) : 4206 - 4212Min, Sung-Wook论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea论文数: 引用数: h-index:机构:Yang, Sung Jin论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South KoreaKo, Kyeong Rok论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South KoreaIm, Seongil论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea