Electronic sensitization enhanced p-type ammonia gas sensing of zinc doped MoS2/RGO composites

被引:15
|
作者
Sibi, S. P. Linto [1 ]
Rajkumar, M. [1 ]
Govindharaj, Kamaraj [2 ]
Mobika, J. [3 ]
Priya, V. Nithya [1 ]
Kumar, R. T. Rajendra [2 ]
机构
[1] PSG Coll Arts & Sci, Dept Phys, Coimbatore 641014, Tamil Nadu, India
[2] Bharathiar Univ, Dept Nanosci & Technol, Adv Mat & Devices Lab AMDL, Coimbatore 641046, Tamil Nadu, India
[3] Nandha Engn Coll, Dept Phys, Erode 638052, Tamil Nadu, India
关键词
Zinc doped MoS 2; RGO; p -type ammonia gas sensor; Defect engineering; Heterojunction; VOC; REDUCED GRAPHENE OXIDE; HYDROGEN EVOLUTION; MONOLAYER MOS2; PERFORMANCE; SENSOR; NANOPARTICLES; NANOSHEETS; NANOCOMPOSITES;
D O I
10.1016/j.aca.2023.340932
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Zinc (Zn) doping induced synergetic effects of defects engineering and heterojunction in Molybdenum disul-phide/Reduced graphene oxide (MoS2/RGO) effectively enhances the p-type Volatile organic compounds (VOC) gas sensing traits and helps in tailoring the over dependence on noble metals for surface sensitization. Through this work, we have successfully prepared Zn doped MoS2 grafted on RGO employing an in-situ hydrothermal method. Optimal doping concentration of Zn dopants in the MoS2 lattice triggered more active sites on the basal plane of MoS2 with the aid of defects promoted by the zinc dopants. Effective intercalation of RGO further boost up the exposed surface area of Zn doped MoS2 for further interaction of ammonia gas molecules. Besides, smaller crystallite size brought out by 5% Zn dopants aids in efficient charge transfer across the heterojunctions that further amplifies the ammonia sensing traits with a peak response of 32.40% along with a response time of 21.3 s and recovery time of 44.90 s. The as prepared ammonia gas sensor exhibited excellent selectivity and repeat-ability. The obtained results reveal that transition metal doping into the host lattice proves to be a promising approach for VOC sensing characteristics of p-type gas sensors and gives insight about the importance of dopants and defects for the development of highly efficient gas sensors in the future.
引用
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页数:12
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