Improving performance of Al2O3/AlN/GaN MOSC-HEMTs via microwave annealing

被引：0

作者：

Chen, Dingbo ^{[1
]}

Li, Xiao-Xi ^{[1
]}

Li, Yu-Chun ^{[1
]}

Peng, Bo-Fang ^{[1
]}

Wei Zhang, David ^{[1
]}

Lu, Hong-Liang ^{[1
]}

机构：

[1] State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai,200433, China

来源：

Applied Surface Science | 2021年 / 570卷

基金：

中国国家自然科学基金;

关键词：

AlN films - AlN/GaN - Annealing process - Atomic layer deposition - Atomic-layer deposition - Improving performance - Microwave annealing - Mosc-hemt - Multi-functional - Performance;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A multi-functional microwave annealing (MWA) process was proposed for high-performance GaN heterostructure devices. By this means, an Al2O3/AlN/GaN MOS-channel high-electron-mobility transistor was fabricated. The MWA was performed on both the AlN insertion layer and electrode metals, enabling the formation of high-quality AlN/GaN interface and good ohmic contact at the same time. A better performance of lower threshold voltage hysteresis (more than 2 times lower), smaller gate leakage, and larger current output (∼1.7 times larger) was hence obtained. © 2021 Elsevier B.V.

引用

共 50 条

[41] MICROWAVE SINTERING OF AL2O3
VODEGEL, S
HANNAPPEL, C
WILLERTPORADA, M
METALL, 1994, 48 (03): : 206 - 210
[42] Defects and interfaces in epitaxial ZnO/α-Al2O3 and AlN/ZnO/α-Al2O3 heterostructures
J Appl Phys, 5 (2597):
[43] Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium
Taking, S.
Banerjee, A.
Zhou, H.
Li, X.
Khokhar, A. Z.
Oxland, R.
McGregor, I.
Bentley, S.
Rahman, F.
Thayne, I.
Dabiran, A. M.
Wowchak, A. M.
Cui, B.
Wasige, E.
ELECTRONICS LETTERS, 2010, 46 (04) : 301 - U57
[44] Defects and interfaces in epitaxial ZnO/α-Al2O3 and AlN/ZnO/α-Al2O3, heterostructures
Narayan, J
Dovidenko, K
Sharma, AK
Oktyabrsky, S
JOURNAL OF APPLIED PHYSICS, 1998, 84 (05) : 2597 - 2601
[45] Impact of annealing on ALD Al2O3 gate dielectric for GaN MOS devices
Marron, Thomas
Takashima, Shinya
Li, Zhongda
Chow, T. Paul
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 907 - 910
[46] Optical phonon scattering on electronic mobility in Al2O3/AlGaN/AlN/GaN heterostructures
Zhou, X. J.
Qu, Y.
Ban, S. L.
Wang, Z. P.
SUPERLATTICES AND MICROSTRUCTURES, 2017, 112 : 1 - 9
[47] Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator
Chiu, Hsien-Chin
Liu, Chia-Hao
Huang, Chong-Rong
Chiu, Chi-Chuan
Wang, Hsiang-Chun
Kao, Hsuan-Ling
Lin, Shinn-Yn
Chien, Feng-Tso
MEMBRANES, 2021, 11 (10)
[48] The effect of Si3N4/Al2O3 stacked structure of AlGaN/GaN HEMTs
Xing, Yanhui
Han, Zishuo
Huang, Xingjie
Yu, Guohao
Yin, Can
Guan, Baolu
Han, Jun
Zhang, Baoshun
Zeng, Zhongming
MICROELECTRONICS RELIABILITY, 2023, 151
[49] Thermally Grown TiO2 and Al2O3 for GaN-Based MOS-HEMTs
Rawat, Akanksha
Meer, Mudassar
Surana, Vivek Kumar
Bhardwaj, Navneet
Pendem, Vikas
Garigapati, Navya Sri
Yadav, Yogendra
Ganguly, Swaroop
Saha, Dipankar
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (09) : 3725 - 3731
[50] Al2O3 passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance
Wang, Han
Chung, Jinwook W.
Gao, Xiang
Guo, Shiping
Palacios, Tomas
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, 7 (10): : 2440 - 2444

← 1 2 3 4 5 →