Improving performance of Al2O3/AlN/GaN MOSC-HEMTs via microwave annealing

被引：0

作者：

Chen, Dingbo ^{[1
]}

Li, Xiao-Xi ^{[1
]}

Li, Yu-Chun ^{[1
]}

Peng, Bo-Fang ^{[1
]}

Wei Zhang, David ^{[1
]}

Lu, Hong-Liang ^{[1
]}

机构：

[1] State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai,200433, China

来源：

Applied Surface Science | 2021年 / 570卷

基金：

中国国家自然科学基金;

关键词：

AlN films - AlN/GaN - Annealing process - Atomic layer deposition - Atomic-layer deposition - Improving performance - Microwave annealing - Mosc-hemt - Multi-functional - Performance;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A multi-functional microwave annealing (MWA) process was proposed for high-performance GaN heterostructure devices. By this means, an Al2O3/AlN/GaN MOS-channel high-electron-mobility transistor was fabricated. The MWA was performed on both the AlN insertion layer and electrode metals, enabling the formation of high-quality AlN/GaN interface and good ohmic contact at the same time. A better performance of lower threshold voltage hysteresis (more than 2 times lower), smaller gate leakage, and larger current output (∼1.7 times larger) was hence obtained. © 2021 Elsevier B.V.

引用

共 50 条

[31] Performance Enhancement of Normally-Off Al2O3/AlN/GaNMOS-Channel-HEMTs with an ALD-Grown AlN Interfacial Layer
Liu, Shenghou
Yang, Shu
Tang, Zhikai
Jiang, Qimeng
Liu, Cheng
Wang, Maojun
Chen, Kevin J.
2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2014, : 362 - 365
[32] Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3 charge trapping layer
Duan, Jiachen
Zhang, Yuanlei
Liang, Ye
Cai, Yutao
Liu, Wen
2022 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT), 2022, : 89 - 92
[33] Performance Improvement and Current Collapse Suppression of Al2O3/AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation
Shen, Lingyan
Zhang, Dongliang
Cheng, Xinhong
Zheng, Li
Xu, Dawei
Wang, Qian
Li, Jingjie
Cao, Duo
Yu, Yuehui
IEEE ELECTRON DEVICE LETTERS, 2017, 38 (05) : 596 - 599
[34] Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors
Legallais, Maxime
Lefevre, Gauthier
Martin, Simon
Labau, Sebastien
Bassani, Franck
Pelissier, Bernard
Baron, Thierry
Vauche, Laura
Le Royer, Cyrille
Charles, Matthew
Vandendaele, William
Plissonnier, Marc
Gwoziecki, Romain
Salem, Bassem
ADVANCED MATERIALS INTERFACES, 2022, 9 (05)
[35] Influence of GaN capping on performance of InAlN/AlN/GaN MOS-HEMT with Al2O3 gate insulation grown by CVD
Pozzovivo, G.
Kuzmik, J.
Golka, S.
Cico, K.
Froehlich, K.
Carlin, J. -F.
Gonschorek, M.
Grandjean, N.
Schrenk, W.
Strasser, G.
Pogany, D.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1956 - +
[36] Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al2O3 Passivation
Chung, Jinwook W.
Saadat, Omair I.
Tirado, Jose M.
Gao, Xiang
Guo, Shiping
Palacios, Tomas
IEEE ELECTRON DEVICE LETTERS, 2009, 30 (09) : 904 - 906
[37] Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures
Zoino, S.
Borowik, L.
Mohamad, B.
Nowak, E.
Kempisty, P.
JOURNAL OF APPLIED PHYSICS, 2023, 134 (15)
[38] Impact of AIN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs
Acurio, E.
Crupi, F.
Magnone, P.
Trojman, L.
Iucolano, F.
MICROELECTRONIC ENGINEERING, 2017, 178 : 42 - 47
[39] Synthesis of Al–Al2O3 and Al–Aln Nanoparticle Composites Via Electric Explosion of Wires
M. I. Lerner
A. S. Lozhkomoev
A. V. Pervikov
O. V. Bakina
Russian Physics Journal, 2016, 59 : 422 - 429
[40] Fabrication and Characteristics of AlInN/AlN/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric
Mao Wei
Zhang Jin-Cheng
Xue Jun-Shuai
Hao Yao
Ma Xiao-Hua
Wang Chong
Liu Hong-Xia
Xu Sheng-Rui
Yang Lin-An
Bi Zhi-Wei
Liang Xiao-Zhen
Zhang Jin-Feng
Kuang Xian-Wei
CHINESE PHYSICS LETTERS, 2010, 27 (12)

← 1 2 3 4 5 →