Improving performance of Al2O3/AlN/GaN MOSC-HEMTs via microwave annealing

被引：0

作者：

Chen, Dingbo ^{[1
]}

Li, Xiao-Xi ^{[1
]}

Li, Yu-Chun ^{[1
]}

Peng, Bo-Fang ^{[1
]}

Wei Zhang, David ^{[1
]}

Lu, Hong-Liang ^{[1
]}

机构：

[1] State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai,200433, China

来源：

Applied Surface Science | 2021年 / 570卷

基金：

中国国家自然科学基金;

关键词：

AlN films - AlN/GaN - Annealing process - Atomic layer deposition - Atomic-layer deposition - Improving performance - Microwave annealing - Mosc-hemt - Multi-functional - Performance;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A multi-functional microwave annealing (MWA) process was proposed for high-performance GaN heterostructure devices. By this means, an Al2O3/AlN/GaN MOS-channel high-electron-mobility transistor was fabricated. The MWA was performed on both the AlN insertion layer and electrode metals, enabling the formation of high-quality AlN/GaN interface and good ohmic contact at the same time. A better performance of lower threshold voltage hysteresis (more than 2 times lower), smaller gate leakage, and larger current output (∼1.7 times larger) was hence obtained. © 2021 Elsevier B.V.

引用

共 50 条

[1] Improving performance of Al2O3/AlN/GaN MOSC-HEMTs via microwave annealing
Chen, Dingbo
Li, Xiao-Xi
Li, Yu-Chun
Peng, Bo-Fang
Zhang, David Wei
Lu, Hong-Liang
APPLIED SURFACE SCIENCE, 2021, 570
[2] Improving Performance of Al2O3/AlN/GaN MIS HEMTs via In Situ N2 Plasma Annealing
Sun, Mengyuan
Wang, Luyu
Zhang, Penghao
Chen, Kun
MICROMACHINES, 2023, 14 (06)
[3] Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer
Liu, Shenghou
Yang, Shu
Tang, Zhikai
Jiang, Qimeng
Liu, Cheng
Wang, Maojun
Chen, Kevin J.
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (07) : 723 - 725
[4] AlN/GaN MOS-HEMTs With Thermally Grown Al2O3 Passivation
Taking, Sanna
MacFarlane, Douglas
Wasige, Edward
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (05) : 1418 - 1424
[5] Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
Malmros, Anna
Gamarra, Piero
di Forte-Poisson, Marie-Antoinette
Hjelmgren, Hans
Lacam, Cedric
Thorsell, Mattias
Tordjman, Maurice
Aubry, Raphael
Rorsman, Niklas
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (03) : 235 - 237
[6] Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures
Dalapati, Pradip
Arulkumaran, Subramaniam
Xie, Hanlin
Ng, Geok Ing
APPLIED PHYSICS LETTERS, 2025, 126 (11)
[7] Impact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs
Lee, Dong Seup
Laboutin, Oleg
Cao, Yu
Johnson, Wayne
Beam, Edward
Ketterson, Andrew
Schuette, Michael
Saunier, Paul
Palacios, Tomas
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (07) : 976 - 978
[8] Rapid thermal annealing and performance of Al2O3/GaN metaloxide-semiconductor structures
Cico, K.
Kuzmik, J.
Gregusova, D.
Lalinsky, T.
Georgakilas, A.
Pogany, D.
Frohlich, K.
ASDAM '06: SIXTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS, 2006, : 197 - 200
[9] Microstructures of AlN buffer layers for the growth of GaN on (0001) Al2O3
Yeadon, M
Kim, W
Botchkarev, AE
Mohammad, SN
Morkoc, H
Gibson, JM
III-V NITRIDES, 1997, 449 : 239 - 244
[10] Enhanced quality of Al2O3/SiC gate stack via microwave plasma annealing
You, Nan-Nan
Liu, Xin-Yu
Zhang, Qian
Wang, Zhen
Wang, Jia-Yi
Xu, Yang
Li, Xiu-Yan
Guo, Yu-Zheng
Wang, Sheng-Kai
RARE METALS, 2024, 43 (10) : 5362 - 5371

← 1 2 3 4 5 →