Collector optimization for improving the product of the breakdown voltage–cutoff frequency in SiGe HBT

被引：0

作者：

付强 ^{[1
,2
]}

张万荣 ^{[1
]}

金冬月 ^{[1
]}

赵彦晓 ^{[1
]}

张良浩 ^{[1
]}

机构：

[1] College of Electronic Information and Control Engineering,Beijing University of Technology

[2] College of Physics,Liaoning

来源：

Journal of Semiconductors | 2015年 / 36卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

摘要：

Compared with BVceo,BVces is more related to collector optimization and more practical significance,so that BVces×fT rather than BVceO×fT is employed in representing the limit of the product of the breakdown voltage-cutoff frequency in SiGe HBT for collector engineering design.Instead of a single decrease in collector doping to improve BVces×fT and BVceo×fT,a novel thin composite of N- and P+ doping layers inside the CB SCR is presented to improve the well-known tradeoff between the breakdown voltage and cut-off frequency in SiGe HBT,and BVces and BVceo are improved respectively with slight degradation in fT.As a result,the BVces×fT product is improved from 537.57 to 556.4 GHz·V,and the BVceo×fT product is improved from309.51 to 326.35 GHz·V.

引用

页码：61 / 64

页数：4

共 29 条

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