TCAD-Based Optimization of Field Plate Length & Passivation Layer of AlGaN/GaN HEMT for Higher Cut-Off Frequency & Breakdown Voltage

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作者：
Neha [1 ]
Kumari, Vandana [2 ]
Gupta, Mridula [3 ]
Saxena, Manoj [1 ]
机构：
[1] Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi,110 078, India
[2] Department of Electronics, Maharaja Agrasen College, University of Delhi, New Delhi,110 096, India
[3] Department of Electronics Science, University of Delhi, South Campus, New Delhi,110 021, India
来源：
IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India) | 2022年 / 39卷 / 01期
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页码：63 / 71
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