Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction

被引：0

作者：

Zeng, Hui ^{[1
]}

Wang, Weimin ^{[2
]}

Ivanov, Ivan G. ^{[1
]}

Darakchieva, Vanya ^{[1
,3
]}

Sun, Jianwu ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden

[2] MAX IV Lab, Fotongatan 2, SE-22484 Lund, Sweden

[3] Lund Univ, NanoLund & Solid State Phys, S-22100 Lund, Sweden

来源：

APPLIED PHYSICS LETTERS | 2024年 / 125卷 / 16期

基金：

瑞典研究理事会;

关键词：

CO3O4; GROWTH;

D O I：

10.1063/5.0226900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The band offsets of semiconductor heterojunctions are critical parameters for the design of electronic and optoelectronic devices. In this work, we report the fabrication of a Co3O4/3C-SiC p-n heterojunction and the determination of the conduction band and valence band offsets at the Co3O4/3C-SiC heterojunction. Our results reveal that the Co3O4/3C-SiC p-n heterojunction exhibits a type-II band alignment, with a conduction band offset of 0.75 eV and a valence band offset of 0.96 eV. These experimental findings are crucial for the design and development of 3C-SiC devices for electronic and optoelectronic applications.

引用

页数：6

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