Impact of reverse current spreading on diode conduction reliability of SBD-embedded SiC MOSFET with deep p-shield structure

被引：0

作者：

Asaba, Shunsuke ^{[1
,2
]}

Furukawa, Masaru ^{[1
]}

Kusumoto, Yuji ^{[1
]}

Iijima, Ryosuke ^{[2
]}

Kono, Hiroshi ^{[1
]}

机构：

[1] Toshiba Elect Devices & Storage Corp, Akashi, Hyogo, Japan

[2] Toshiba Co Ltd, Corporate R&D Ctr, Kawasaki, Kanagawa, Japan

来源：

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 | 2024年

关键词：

SiC; MOSFET; Embedded SBD; Short circuit;

D O I：

10.1109/ISPSD59661.2024.10579582

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The device structure of SBD-embedded MOSFET was investigated and the complicated trade-off relationship of on-state resistance, short-circuit ruggedness, and diode conduction capability was improved. TCAD analysis indicated that bipolar conduction in body diode of MOSFET with deep p-shield can be suppressed by developing current spreading layer structure. The fabricated devices demonstrated adequate ruggedness in short-circuit operation and unipolar conduction capability in diode operation while obtaining low on-state resistance. The reduction in leakage by the developed structure enabled drift layer tuning and finally low on-resistance of 2.0 m ohm center dot cm(2) was demonstrated.

引用

页码：5 / 8

页数：4

共 10 条

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