Advances on MXene-Based Memristors for Neuromorphic Computing: A Review on Synthesis, Mechanisms, and Future Directions

被引:4
|
作者
Teixeira, Henrique [1 ]
Dias, Catarina [1 ]
Silva, Andreia Vieira [1 ]
Ventura, Joao [1 ]
机构
[1] Univ Porto, Fac Ciencias, Dept Fis & Astron, IFIMUP, P-4169007 Porto, Portugal
关键词
Artificial Synapse; Memristor; MXene; Neuromorphic Computing; Resistive Switching; 2DMaterials; van der Waals; Memory; NeuralNetworks; RESISTIVE SWITCHING MEMORY; TRANSITION-METAL CARBIDES; ELECTRONIC-PROPERTIES; REMANENT POLARIZATION; ARTIFICIAL SYNAPSE; SURFACE-CHEMISTRY; OXIDE; DEVICE; EXFOLIATION; IMPROVEMENT;
D O I
10.1021/acsnano.4c03264
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Neuromorphic computing seeks to replicate the capabilities of parallel processing, progressive learning, and inference while retaining low power consumption by drawing inspiration from the human brain. By further overcoming the constraints imposed by the traditional von Neumann architecture, this innovative approach has the potential to revolutionize modern computing systems. Memristors have emerged as a solution to implement neuromorphic computing in hardware, with research based on developing functional materials for resistive switching performance enhancement. Recently, two-dimensional MXenes, a family of transition metal carbides, nitrides, and carbonitrides, have begun to be integrated into these devices to achieve synaptic emulation. MXene-based memristors have already demonstrated diverse neuromorphic characteristics while enhancing the stability and reducing power consumption. The possibility of changing the physicochemical properties through modifications of the surface terminations, bandgap, interlayer spacing, and oxidation for each existing MXene makes them very promising. Here, recent advancements in MXene synthesis, device fabrication, and characterization of MXene-based neuromorphic artificial synapses are discussed. Then, we focus on understanding the resistive switching mechanisms and how they connect with theoretical and experimental data, along with the innovations made during the fabrication process. Additionally, we provide an in-depth review of the neuromorphic performance, making a connection with the resistive switching mechanism, along with a compendium of each relevant performance factor for nonvolatile and volatile applications. Finally, we state the remaining challenges in MXene-based devices for artificial synapses and the next steps that could be taken for future development.
引用
收藏
页码:21685 / 21713
页数:29
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