Ferromagnetic manganese silicide nanoparticles formed by ion implantation in silicon

被引：0

作者：

Ohsugi, R. ^{[1
]}

Kawano, M. ^{[1
]}

Wakabayashi, Y. K. ^{[1
]}

Krockenberger, Y. ^{[1
]}

Sumikura, H. ^{[1
]}

Noborisaka, J. ^{[1
]}

Nishiguchi, K. ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Tokyo, Japan

来源：

2024 IEEE SILICON NANOELECTRONICS WORKSHOP, SNW 2024 | 2024年

关键词：

ion-implantation; silicide; magnetism;

D O I：

10.1109/SNW63608.2024.10639207

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Manganese silicide nanoparticles (NPs) embedded in silicon were fabricated by an ion implantation method with various manganese ion acceleration energies (E-acc). The NPs were single crystalline with a tetragonal structure and exhibited ferromagnetic properties below the blocking temperature (T-B), at which the magnetization of NPs starts to fall into a metastable state and becomes fixed. T-B increased as E-acc increased. On the basis of Neel's relaxation theory, we revealed that this dependence originates from the influence of E-acc on the particle sizes.

引用

页码：73 / 74

页数：2

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