Ferromagnetic manganese silicide nanoparticles formed by ion implantation in silicon

被引：0

作者：

Ohsugi, R. ^{[1
]}

Kawano, M. ^{[1
]}

Wakabayashi, Y. K. ^{[1
]}

Krockenberger, Y. ^{[1
]}

Sumikura, H. ^{[1
]}

Noborisaka, J. ^{[1
]}

Nishiguchi, K. ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Tokyo, Japan

来源：

2024 IEEE SILICON NANOELECTRONICS WORKSHOP, SNW 2024 | 2024年

关键词：

ion-implantation; silicide; magnetism;

D O I：

10.1109/SNW63608.2024.10639207

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Manganese silicide nanoparticles (NPs) embedded in silicon were fabricated by an ion implantation method with various manganese ion acceleration energies (E-acc). The NPs were single crystalline with a tetragonal structure and exhibited ferromagnetic properties below the blocking temperature (T-B), at which the magnetization of NPs starts to fall into a metastable state and becomes fixed. T-B increased as E-acc increased. On the basis of Neel's relaxation theory, we revealed that this dependence originates from the influence of E-acc on the particle sizes.

引用

页码：73 / 74

页数：2

共 50 条

[1] Pulse ion annealing of silicon layers with silver nanoparticles formed by ion implantation
Stepanov, A. L.
Batalov, R., I
Bayazitov, R. M.
Rogov, A. M.
VACUUM, 2020, 182
[2] Ferromagnetic FePt nanoparticles formed in Al2O3 by ion implantation
White, CW
Withrow, SP
Budai, JD
Boatner, LA
Sorge, KD
Thompson, JR
Beaty, KS
Meldrum, A
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 191 : 437 - 441
[3] EVALUATION OF ELECTRICAL-PROPERTIES OF VANADIUM SILICIDE SILICON SCHOTTKY DIODES FORMED BY ION-IMPLANTATION
SALVI, VP
NARSALE, AM
VIDWANS, S
RANGWALA, AA
ARORA, BM
JAIN, AK
KULDEEP
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 (pt 2): : 1124 - 1128
[4] ZnTe nanoparticles formed by ion implantation in a SiO2 layer on silicon
Chemam, R
Bouabellou, A
Grob, JJ
Muller, D
Schmerber, G
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 216 : 116 - 120
[5] Formation of ferromagnetic FePt nanoparticles by ion implantation
White, CW
Withrow, SP
Budai, JD
Boatner, LA
Sorge, KD
Thompson, JR
Beaty, KS
Meldrum, A
NANOPARTICULATE MATERIALS, 2002, 704 : 187 - 192
[6] SILICON NICKEL SILICIDE SCHOTTKY BARRIERS FORMED BY ION MIXING
GERASIMENKO, NN
GERSHINSKII, AE
SURTAEV, AY
SOKOLOV, SA
CHEREPOV, EI
FOMIN, BI
TIMOFEEVA, GV
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1983, 78 (02): : K151 - K154
[7] Ferromagnetic properties of FeSi particles formed by Fe implantation into silicon
Ivoilov, NG
Chistyakov, VA
Khripunov, DM
Dulov, EN
Petukhov, VY
Ibragimova, MI
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 1999, 63 (07): : 1435 - 1439
[8] Metallic nanoparticles formed in polyimide by ion implantation
Kobayaski, T
Iwata, T
Doi, Y
Iwaki, M
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 : 548 - 553
[9] Structure and Properties of Nanoparticles Formed by Ion Implantation
Meldrum, A.
Lopez, R.
Magruder, R. H.
Boatner, L. A.
White, C. W.
MATERIALS SCIENCE WITH ION BEAMS, 2010, 116 : 255 - 285
[10] Synthesis of cobalt silicide on porous silicon by high dose ion implantation
Ramos, AR
Pászti, F
Kotai, E
Vázsonyi, É
Conde, O
da Silva, MR
da Silva, MF
Soares, JC
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 178 : 283 - 286

← 1 2 3 4 5 →