Bismuth-related defects in n-type silicon irradiated with protons: A comparison to similar defects formed under electron irradiation

被引：0
|
作者：
Emtsev, Vadim [1 ]
Abrosimov, Nikolay [2 ]
Kozlovski, Vitalii [3 ]
Lastovskii, Stanislav [4 ]
Oganesyan, Gagik [1 ]
Poloskin, Dmitrii [1 ]
机构：
[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia
[2] Leibniz Inst Kristallzuchtung IKZ, D-12489 Berlin, Germany
[3] Peter Great St Petersburg Polytech Univ, St Petersburg 195251, Russia
[4] Sci Pract Mat Res Ctr NAS Belarus, Minsk 220072, BELARUS
来源：
JOURNAL OF APPLIED PHYSICS | 2024年 / 136卷 / 10期
关键词：
PARAMAGNETIC-RESONANCE;
D O I：
10.1063/5.0226406
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electrical properties of defects produced in strongly bismuth-doped silicon by 15 MeV protons are investigated in detail. Electrical measurements on irradiated samples by means of the van der Pauw technique are conducted over a wide temperature range of 20-300 K to furnish information on radiation-produced complexes. It is shown that the properties of the dominant bismuth-related defects are the same as earlier found in the electron-irradiated material. These complexes are tentatively identified as bismuth-vacancy pairs being deep donors. Their atomic configuration appears to be radically different from what is known about similar vacancy-related defects with other group-V impurities. These bismuth-related pairs are stable up to T approximate to 300 degrees C. Some special features of defect formation and annealing processes of radiation defects in bismuth-doped silicon subjected to electron and proton irradiation are discussed. This information may be of advantage in modeling impurity-related complexes containing oversized impurity atoms in silicon.
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页数：7
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