Advances and Applications of Oxidized van der Waals Transition Metal Dichalcogenides
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作者:
Kim, Brian S. Y.
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Univ Arizona, Dept Mat Sci & Engn, Tucson, AZ 85721 USA
Univ Arizona, Dept Phys, Tucson, AZ 85721 USAUniv Arizona, Dept Mat Sci & Engn, Tucson, AZ 85721 USA
Kim, Brian S. Y.
[1
,2
]
Ngo, Tien Dat
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机构:
Imec, Remisebosweg 1, B-3000 Leuven, BelgiumUniv Arizona, Dept Mat Sci & Engn, Tucson, AZ 85721 USA
Ngo, Tien Dat
[3
]
Hassan, Yasir
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机构:
Chungnam Natl Univ, Dept Mat Sci & Engn, Daejeon 34134, South KoreaUniv Arizona, Dept Mat Sci & Engn, Tucson, AZ 85721 USA
Hassan, Yasir
[4
]
Chae, Sang Hoon
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机构:
Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, SingaporeUniv Arizona, Dept Mat Sci & Engn, Tucson, AZ 85721 USA
Chae, Sang Hoon
[5
,6
]
Yoon, Soon-Gil
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Chungnam Natl Univ, Dept Mat Sci & Engn, Daejeon 34134, South KoreaUniv Arizona, Dept Mat Sci & Engn, Tucson, AZ 85721 USA
Yoon, Soon-Gil
[4
]
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机构:
Choi, Min Sup
[4
]
机构:
[1] Univ Arizona, Dept Mat Sci & Engn, Tucson, AZ 85721 USA
[2] Univ Arizona, Dept Phys, Tucson, AZ 85721 USA
[3] Imec, Remisebosweg 1, B-3000 Leuven, Belgium
[4] Chungnam Natl Univ, Dept Mat Sci & Engn, Daejeon 34134, South Korea
2D materials;
surface oxidation;
transition metal dichalcogenides;
van der Waals heterostructures;
ATOMIC LAYER DEPOSITION;
OPTICAL-PROPERTIES;
MULTILAYER MOS2;
2D WSE2;
OXIDATION;
MONOLAYER;
DEFECT;
AIR;
PHOTOLUMINESCENCE;
SEMICONDUCTORS;
D O I:
10.1002/advs.202407175
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
The surface oxidation of 2D transition metal dichalcogenides (TMDs) has recently gained tremendous technological and fundamental interest owing to the multi-functional properties that the surface oxidized layer opens up. In particular, when integrated into other 2D materials in the form of van der Waals heterostructures, oxidized TMDs enable designer properties, including novel electronic states, engineered light-matter interactions, and exceptional-point singularities, among many others. Here, the evolving landscapes of the state-of-the-art surface engineering technologies that enable controlled oxidation of TMDs down to the monolayer-by-monolayer limit are reviewed. Next, the use of oxidized TMDs in van der Waals heterostructures for different electronic and photonic device platforms, materials growth processes, engineering concepts, and synthesizing new condensed matter phenomena is discussed. Finally, challenges and outlook for future impact of oxidized TMDs in driving rapid advancements across various application fronts is discussed. This review covers recent progress in oxidized 2D transition metal dichalcogenides and their integration into other 2D materials in the form of van der Waals heterostructures. This review focuses on the new designer properties and functionalities that emerge through this integration, along with a critical outlook on promising next steps that will guide the focus and help advance the field. image
机构:
Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R ChinaBeijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
Zhao, Huiyan
Han, Lihong
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Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R ChinaBeijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
Han, Lihong
Jia, Baonan
论文数: 0引用数: 0
h-index: 0
机构:
Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R ChinaBeijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
Jia, Baonan
Chen, Yingjie
论文数: 0引用数: 0
h-index: 0
机构:
Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
Beijing Univ Posts & Telecommun, Res Inst, Shenzhen 518057, Peoples R ChinaBeijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
Chen, Yingjie
Guan, Xiaoning
论文数: 0引用数: 0
h-index: 0
机构:
Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R ChinaBeijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
Guan, Xiaoning
Wu, Liyuan
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, CAS Key Lab Biomed Effects Nanomat & Nanosafety, Inst High Energy Phys, Beijing 100049, Peoples R ChinaBeijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
Wu, Liyuan
Lu, Pengfei
论文数: 0引用数: 0
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机构:
Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R ChinaBeijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
Lu, Pengfei
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,
2022,
16
(06):
机构:
Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USAUniv Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
Zhang, Chenxi
Gong, Cheng
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机构:
Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USAUniv Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
Gong, Cheng
Nie, Yifan
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机构:
Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USAUniv Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
Nie, Yifan
Min, Kyung-Ah
论文数: 0引用数: 0
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机构:
Sejong Univ, Dept Phys, Seoul 143747, South Korea
Sejong Univ, Graphene Res Inst, Seoul 143747, South KoreaUniv Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
Min, Kyung-Ah
Liang, Chaoping
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机构:
Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USAUniv Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
Liang, Chaoping
Oh, Young Jun
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机构:
Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USAUniv Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
机构:
Fuzhou Univ, Coll Mat Sci & Engn, Multiscale Computat Mat Facil, Fuzhou 350100, Peoples R China
Fujian Prov Univ, Fuzhou Univ, Key Lab Ecomat Adv Technol, Fuzhou 350100, Peoples R ChinaFuzhou Univ, Coll Mat Sci & Engn, Multiscale Computat Mat Facil, Fuzhou 350100, Peoples R China
Peng, Qiong
Wang, Zhenyu
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机构:
Fuzhou Univ, Coll Mat Sci & Engn, Multiscale Computat Mat Facil, Fuzhou 350100, Peoples R China
Fujian Prov Univ, Fuzhou Univ, Key Lab Ecomat Adv Technol, Fuzhou 350100, Peoples R ChinaFuzhou Univ, Coll Mat Sci & Engn, Multiscale Computat Mat Facil, Fuzhou 350100, Peoples R China
Wang, Zhenyu
Sa, Baisheng
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机构:
Fuzhou Univ, Coll Mat Sci & Engn, Multiscale Computat Mat Facil, Fuzhou 350100, Peoples R China
Fujian Prov Univ, Fuzhou Univ, Key Lab Ecomat Adv Technol, Fuzhou 350100, Peoples R ChinaFuzhou Univ, Coll Mat Sci & Engn, Multiscale Computat Mat Facil, Fuzhou 350100, Peoples R China
Sa, Baisheng
Wu, Bo
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机构:
Fuzhou Univ, Coll Mat Sci & Engn, Multiscale Computat Mat Facil, Fuzhou 350100, Peoples R China
Fujian Prov Univ, Fuzhou Univ, Key Lab Ecomat Adv Technol, Fuzhou 350100, Peoples R ChinaFuzhou Univ, Coll Mat Sci & Engn, Multiscale Computat Mat Facil, Fuzhou 350100, Peoples R China
Wu, Bo
Sun, Zhimei
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机构:
Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
Beihang Univ, Ctr Integrated Computat Mat Engn, Int Res Inst Multidisciplinary Sci, Beijing 100191, Peoples R ChinaFuzhou Univ, Coll Mat Sci & Engn, Multiscale Computat Mat Facil, Fuzhou 350100, Peoples R China