INITIO MOLECULAR-DYNAMICS;
TOTAL-ENERGY CALCULATIONS;
DENSITY-WAVE STATE;
D O I:
10.1103/PhysRevB.110.075427
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The properties of 2D materials are strongly influenced by their substrate, leading to a variety of proximity effects like screening, charge transfer, and hybridization. Surprisingly, there is a dearth of theoretical studies on these effects. Particularly, previous theoretical research on the star of David (SOD) structure in 1T-NbSe2 T-NbSe 2 has focused on single-layer configurations or stacking with the same 1T T phase without any real substrate. Here, we depart from these approaches and explore how these proximity effects shape the electronic and magnetic properties of the 1T-NbSe2 T-NbSe 2 phase when it is grown on the metallic 1H-NbSe2 H-NbSe 2 substrate. Using density functional calculations, we establish a common framework to define the key characteristics of both free-standing 1T-NbSe2 T-NbSe 2 and 1H-NbSe2. H-NbSe 2 . We then identify the optimal stacking arrangement for these two layers, revealing a transfer from the 1T T to the 1H H phase and a reorganization of charge within each layer. Our findings indicate that the magnetic moment of the SOD structure is still robust; however, it is diminished due to a reduction in the on-site Coulomb interaction of the Hubbard bands. Additionally, the interlayer coupling induces metallicity in the 1T T phase and increases the decoupling of the lower Hubbard band from the valence band.
机构:
Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
Seoul Natl Univ, ISRC, Seoul 151744, South KoreaSeoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
Lee, Gil Sung
Kim, Doo-Hyun
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机构:
Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
Seoul Natl Univ, ISRC, Seoul 151744, South KoreaSeoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
Kim, Doo-Hyun
Cho, Seongjae
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机构:
Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
Seoul Natl Univ, ISRC, Seoul 151744, South KoreaSeoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
Cho, Seongjae
Park, Byung-Gook
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h-index: 0
机构:
Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
Seoul Natl Univ, ISRC, Seoul 151744, South KoreaSeoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
机构:
Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Computat Res Div, Berkeley, CA 94720 USAUniv Calif Berkeley, Lawrence Berkeley Natl Lab, Computat Res Div, Berkeley, CA 94720 USA
Hu, Wei
Wang, Tian
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机构:
Univ Sci & Technol China, Dept Precis Machinery & Precis Instrumentat, Hefei 230026, Anhui, Peoples R ChinaUniv Calif Berkeley, Lawrence Berkeley Natl Lab, Computat Res Div, Berkeley, CA 94720 USA
Wang, Tian
Zhang, Ruiqi
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机构:
Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R ChinaUniv Calif Berkeley, Lawrence Berkeley Natl Lab, Computat Res Div, Berkeley, CA 94720 USA
Zhang, Ruiqi
Yang, Jinlong
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机构:
Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R ChinaUniv Calif Berkeley, Lawrence Berkeley Natl Lab, Computat Res Div, Berkeley, CA 94720 USA