Effect of capping rate on the performance of InAs/GaAs quantum dot solar cell

被引：0
|
作者：
Rai, Anjali [1 ]
机构：
[1] Indian Sch Mines, Indian Inst Technol, Dept Elect Engg, Dhanbad, India
来源：
PHYSICA SCRIPTA | 2024年 / 99卷 / 08期
关键词：
InAs QDs; GaAs capping; growth rate; absorption spectra; spectral response; photocurrent density; EFFICIENCY; NANOSTRUCTURES; GROWTH; LAYER;
D O I：
10.1088/1402-4896/ad5fc5
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The GaAs capping layer significantly influences the structural and optoelectronic characteristics of the InAs quantum dot (QD). The capping rate modifies the essential parameters, such as size, shape, and composition, that determine the optical properties of the QDs. In this work, we present a theoretical model to study the effects of the capping rate on the absorption spectra of InAs dots embedded in the GaAs capping layer. The proposed model can be used for optimizing the structural and optical characteristics of InAs/GaAs QDs without using an annealing procedure or any capping material other than GaAs. In addition, the impact of three different GaAs capping layer growth rates on the performance of quantum dot solar cells is evaluated.
引用
收藏
页数：10
相关论文
共 50 条
  • [41] Voltage recovery in charged InAs/GaAs quantum dot solar cells
    Phu Lam
    Hatch, Sabina
    Wu, Jiang
    Tang, Mingchu
    Dorogan, Vitally G.
    Mazur, Yuriy I.
    Salamo, Gregory J.
    Ramiro, Inigo
    Seeds, Alwyn
    Liu, Huiyun
    NANO ENERGY, 2014, 6 : 159 - 166
  • [42] Defect mediated extraction in InAs/GaAs quantum dot solar cells
    Willis, S. M.
    Dimmock, J. A. R.
    Tutu, F.
    Liu, H. Y.
    Peinado, M. G.
    Assender, H. E.
    Watt, A. A. R.
    Sellers, I. R.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 102 : 142 - 147
  • [43] Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors
    Tongbram, B.
    Shetty, S.
    Ghadi, H.
    Adhikary, S.
    Chakrabarti, S.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 118 (02): : 511 - 517
  • [44] Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors
    B. Tongbram
    S. Shetty
    H. Ghadi
    S. Adhikary
    S. Chakrabarti
    Applied Physics A, 2015, 118 : 511 - 517
  • [45] Effect of Silicon Dopant on the Performance of InAs/GaAs Quantum-Dot Infrared Photodetectors
    Lin, S.-Y., 1600, Japan Society of Applied Physics (43):
  • [46] Effect of silicon dopant on the performance of InAs/GaAs quantum-dot infrared photodetectors
    Lin, SY
    Tsai, YJ
    Lee, SC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2004, 43 (2A): : L167 - L169
  • [47] Dependence of quantum dot photocurrent on the carrier escape nature in InAs/GaAs quantum dot solar cells
    Cedola, Ariel
    Cappelluti, Federica
    Gioannini, Mariangela
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (02)
  • [48] Efficiency limit of InAs/GaAs quantum dot solar cells attributed to quantum dot size effects
    Han, Im Sik
    Smith, Ryan P.
    Kim, Jong Su
    Noh, Sam Kyu
    Lee, Sang Jun
    Lee, Chang-Lyoul
    Leem, Jae Young
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2016, 155 : 70 - 78
  • [49] Effect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells
    Driscoll, Kristina
    Bennett, Mitchell F.
    Polly, Stephen J.
    Forbes, David V.
    Hubbard, Seth M.
    APPLIED PHYSICS LETTERS, 2014, 104 (02)
  • [50] InAs/GaAs quantum dot lasers
    Schmidt, OG
    Kirstaedter, N
    Ledentsov, NN
    Bimberg, D
    Ustinov, VM
    Egorov, AY
    Zhukov, AE
    Maximov, MV
    Kopev, PS
    Alferov, ZI
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 727 - 730
12345