Effect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells

被引：25

作者：

Driscoll, Kristina ^{[1
]}

Bennett, Mitchell F. ^{[1
]}

Polly, Stephen J. ^{[1
]}

Forbes, David V. ^{[1
]}

Hubbard, Seth M. ^{[1
]}

机构：

[1] Rochester Inst Technol, NanoPower Res Labs, Rochester, NY 14623 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 02期

基金：

美国国家科学基金会; 美国国家航空航天局;

关键词：

EFFICIENCY;

D O I：

10.1063/1.4862028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of the position of InAs quantum dots (QD) within the intrinsic region of pin-GaAs solar cells is reported. Simulations suggest placing the QDs in regions of reduced recombination enables a recovery of open-circuit voltage (V-OC). Devices with the QDs placed in the center and near the doped regions of a pin-GaAs solar cell were experimentally investigated. While the V-OC of the emitter-shifted device was degraded, the center and base-shifted devices exhibited V-OC comparable to the baseline structure. This asymmetry is attributed to background doping which modifies the recombination profile and must be considered when optimizing QD placement. (C) 2014 AIP Publishing LLC.

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页数：5

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