Temperature-dependent photoluminescence of arsenic-doped Si nanocrystals

被引：3

作者：

Sun, Edward ^{[1
]}

Su, Fu-Hsiang ^{[1
]}

Chen, Ching-Huang ^{[1
]}

Tsai, Hung-Ling ^{[1
]}

Yang, Jer-Ren ^{[1
]}

Chen, Miin-Jang ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10764, Taiwan

来源：

JOURNAL OF LUMINESCENCE | 2010年 / 130卷 / 08期

关键词：

Si nanocrystal; Photoluminescence; Doping; Indirect bandgap; Radiative recombination; SILICON QUANTUM DOTS; CHEMICAL-VAPOR-DEPOSITION; STIMULATED-EMISSION; POROUS SILICON; OPTICAL GAIN; LUMINESCENCE PROPERTIES; SI/SIO2; SUPERLATTICES; CONFINEMENT; GERMANIUM; INSULATOR;

D O I：

10.1016/j.jlumin.2010.03.017

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The characteristics of temperature-dependent photoluminescence (PL) from Si nanocrystals and effects of arsenic-doping (As-doping) were investigated. The Si nanocrystals on a p-type Si substrate were prepared by low pressure chemical vapor deposition and post-deposition thermal oxidation. The As-doping process was carried out using the gas-phase-doping technique. Temperature-dependent PL from Si nanocrystals exhibited considerable differences between samples with/without As-doping. Phase transition between electron-hole liquid and free exciton was observed in the undoped Si nanocrystals, leading to the increase in PL intensity with temperature less than 50 K. Electron emission from As-doped Si nanocrystals to the p-Si substrate was responsible for the significant increase in PL intensity with temperature greater than 50K. Characteristics of light emission from Si nanocrystals will facilitate the development of silicon-based nanoscaled light-emitting devices. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1485 / 1488

页数：4

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