Defect Engineering in Transition Metal Dichalcogenide-Based Gas Sensors

被引:0
|
作者
Fu, Xiaqing [1 ]
Qiao, Zirui [2 ]
Zhou, Hangyu [3 ]
Xie, Dan [4 ]
机构
[1] Shanghai Univ, Sch Microelect, Shanghai 201800, Peoples R China
[2] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
[3] China Acad Safety Sci & Technol, Beijing 100012, Peoples R China
[4] Tsinghua Univ, Sch Integrated Circuits, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
TMDs; defects engineering; characterization; gas sensing; MONOLAYER MOS2; HYDROGEN EVOLUTION; GRAIN-BOUNDARIES; SINGLE-ATOM; WS2; ADSORPTION; VACANCY; NO2; PHOTOLUMINESCENCE; SNS2;
D O I
10.3390/chemosensors12060085
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Since the discovery of innovative two-dimensional (2D) materials, significant efforts have been dedicated to exploring their intriguing properties and emerging applications. Among all candidates, transition metal dichalcogenides (TMDs) have proven to be exceptional for gas sensing, while defects engineering has been introduced to modify the pristine TMDs for better gas sensing performances. In this review, we systematically summarize types of defects, advanced characterization techniques, and state-of-the-art controllable synthetic methods. Various types of defects in TMDs can induce diverse changes in chemical and electron structures, which are closely correlated with gas sensing ability. Therefore, connections between defects and gas sensing mechanisms and performances have been addressed based on both defect categories and electron affinity of gases. This review will be a guide for researchers in defective materials and open up the field of precisely synthesis chemistry and deepen the understanding of the underlying effects of defects in other 2D materials.
引用
收藏
页数:25
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