Defect Engineering in Transition Metal Dichalcogenide-Based Gas Sensors

被引:0
|
作者
Fu, Xiaqing [1 ]
Qiao, Zirui [2 ]
Zhou, Hangyu [3 ]
Xie, Dan [4 ]
机构
[1] Shanghai Univ, Sch Microelect, Shanghai 201800, Peoples R China
[2] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
[3] China Acad Safety Sci & Technol, Beijing 100012, Peoples R China
[4] Tsinghua Univ, Sch Integrated Circuits, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
TMDs; defects engineering; characterization; gas sensing; MONOLAYER MOS2; HYDROGEN EVOLUTION; GRAIN-BOUNDARIES; SINGLE-ATOM; WS2; ADSORPTION; VACANCY; NO2; PHOTOLUMINESCENCE; SNS2;
D O I
10.3390/chemosensors12060085
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Since the discovery of innovative two-dimensional (2D) materials, significant efforts have been dedicated to exploring their intriguing properties and emerging applications. Among all candidates, transition metal dichalcogenides (TMDs) have proven to be exceptional for gas sensing, while defects engineering has been introduced to modify the pristine TMDs for better gas sensing performances. In this review, we systematically summarize types of defects, advanced characterization techniques, and state-of-the-art controllable synthetic methods. Various types of defects in TMDs can induce diverse changes in chemical and electron structures, which are closely correlated with gas sensing ability. Therefore, connections between defects and gas sensing mechanisms and performances have been addressed based on both defect categories and electron affinity of gases. This review will be a guide for researchers in defective materials and open up the field of precisely synthesis chemistry and deepen the understanding of the underlying effects of defects in other 2D materials.
引用
收藏
页数:25
相关论文
共 50 条
  • [31] Environmental Analysis with 2D Transition-Metal Dichalcogenide-Based Field-Effect Transistors
    Xiaoyan Chen
    Chengbin Liu
    Shun Mao
    [J]. Nano-Micro Letters, 2020, 12
  • [32] Environmental engineering of transition metal dichalcogenide optoelectronics
    LaMountain, Trevor
    Lenferink, Erik J.
    Chen, Yen-Jung
    Stanev, Teodor K.
    Stern, Nathaniel P.
    [J]. FRONTIERS OF PHYSICS, 2018, 13 (04)
  • [33] Constrained optimization of transition metal dichalcogenide-based Bloch surface wave sensor using improved genetic algorithm
    Shujing Chen
    Yiyu Yue
    Jingang Liu
    [J]. Applied Physics A, 2022, 128
  • [34] Environmental Analysis with 2D Transition-Metal Dichalcogenide-Based Field-Effect Transistors
    Xiaoyan Chen
    Chengbin Liu
    Shun Mao
    [J]. Nano-Micro Letters, 2020, 12 (08) : 5 - 28
  • [35] Environmental engineering of transition metal dichalcogenide optoelectronics
    Trevor LaMountain
    Erik J. Lenferink
    Yen-Jung Chen
    Teodor K. Stanev
    Nathaniel P. Stern
    [J]. Frontiers of Physics, 2018, 13
  • [36] Two-dimensional transition metal dichalcogenide-based counter electrodes for dye-sensitized solar cells
    Singh, Eric
    Kim, Ki Seok
    Yeom, Geun Young
    Nalwa, Hari Singh
    [J]. RSC ADVANCES, 2017, 7 (45): : 28234 - 28290
  • [37] Environmental Analysis with 2D Transition-Metal Dichalcogenide-Based Field-Effect Transistors
    Chen, Xiaoyan
    Liu, Chengbin
    Mao, Shun
    [J]. NANO-MICRO LETTERS, 2020, 12 (01)
  • [38] Efficient light-confinement in heterostructured transition metal dichalcogenide-based nanoscrolls for high-performance photonic devices
    Rapti Ghosh
    Hung-I. Lin
    Yu-Siang Chen
    Mario Hofmann
    Ya-Ping Hsieh
    Yang-Fang Chen
    [J]. Journal of Materials Research, 2022, 37 : 660 - 669
  • [39] Tunable coupling of terahertz Dirac plasmons and phonons in transition-metal dichalcogenide-based van der Waals heterostructures
    Lavor, I. R.
    Chaves, Andrey
    Peeters, F. M.
    Van Duppen, B.
    [J]. 2D MATERIALS, 2022, 9 (01)
  • [40] Efficient light-confinement in heterostructured transition metal dichalcogenide-based nanoscrolls for high-performance photonic devices
    Ghosh, Rapti
    Lin, Hung-, I
    Chen, Yu-Siang
    Hofmann, Mario
    Hsieh, Ya-Ping
    Chen, Yang-Fang
    [J]. JOURNAL OF MATERIALS RESEARCH, 2022, 37 (03) : 660 - 669