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Perpendicular magnetic anisotropy of Cr/CoFeB/MgO modulated by MgO thickness
被引:0
|作者:
Guo, Qixun
[1
]
Huang, Yiya
[1
]
Li, Jialiang
[2
,3
]
Wang, Mengjie
[4
]
Yang, Nan
[4
]
Wang, Kun
[5
]
Cui, Chuanyu
[1
]
Xu, Xiulan
[1
]
Teng, Jiao
[4
]
Zhu, Tao
[3
,6
,7
]
Yu, Guanghua
[1
,4
]
机构:
[1] Ji Hua Lab, Foshan 528000, Peoples R China
[2] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
[3] Spallat Neutron Source Sci Ctr, Dongguan 523803, Peoples R China
[4] Univ Sci & Technol Beijing, Dept Mat Phys & Chem, Beijing 100083, Peoples R China
[5] South China Univ Technol, Spin X Inst, Guangzhou 511442, Peoples R China
[6] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[7] Songshan Lake Mat Lab, Dongguan 523429, Peoples R China
基金:
中国国家自然科学基金;
关键词:
MgO thickness;
as-deposited state;
interfacial anisotropy energy density;
polarized neutron reflectometry;
D O I:
10.1088/1361-6463/ad5b01
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The dependence of perpendicular magnetic anisotropy (PMA) on the MgO thickness in Cr/CoFeB/MgO/Ta films has been experimentally investigated. A clear PMA is observed in the as-deposited samples with 1.8 nm MgO while no as-deposited PMA is shown in those with 4.0 nm MgO. This may be attributed to the moderate oxidation degree of CoFeB and larger interfacial anisotropy energy density K i to overcome the volume magnetic anisotropy and demagnetization field. On the contrary, samples with 4.0 nm MgO demonstrate PMA only after annealing, which might be due to the oxygen and boron diffusion during the annealing process. These results would provide a method to optimize the design of CoFeB/MgO structures on 3d metals for future applications in perpendicular magnetic devices.
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页数:7
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