Perpendicular magnetic anisotropy of Cr/CoFeB/MgO modulated by MgO thickness

被引:0
|
作者
Guo, Qixun [1 ]
Huang, Yiya [1 ]
Li, Jialiang [2 ,3 ]
Wang, Mengjie [4 ]
Yang, Nan [4 ]
Wang, Kun [5 ]
Cui, Chuanyu [1 ]
Xu, Xiulan [1 ]
Teng, Jiao [4 ]
Zhu, Tao [3 ,6 ,7 ]
Yu, Guanghua [1 ,4 ]
机构
[1] Ji Hua Lab, Foshan 528000, Peoples R China
[2] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
[3] Spallat Neutron Source Sci Ctr, Dongguan 523803, Peoples R China
[4] Univ Sci & Technol Beijing, Dept Mat Phys & Chem, Beijing 100083, Peoples R China
[5] South China Univ Technol, Spin X Inst, Guangzhou 511442, Peoples R China
[6] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[7] Songshan Lake Mat Lab, Dongguan 523429, Peoples R China
基金
中国国家自然科学基金;
关键词
MgO thickness; as-deposited state; interfacial anisotropy energy density; polarized neutron reflectometry;
D O I
10.1088/1361-6463/ad5b01
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dependence of perpendicular magnetic anisotropy (PMA) on the MgO thickness in Cr/CoFeB/MgO/Ta films has been experimentally investigated. A clear PMA is observed in the as-deposited samples with 1.8 nm MgO while no as-deposited PMA is shown in those with 4.0 nm MgO. This may be attributed to the moderate oxidation degree of CoFeB and larger interfacial anisotropy energy density K i to overcome the volume magnetic anisotropy and demagnetization field. On the contrary, samples with 4.0 nm MgO demonstrate PMA only after annealing, which might be due to the oxygen and boron diffusion during the annealing process. These results would provide a method to optimize the design of CoFeB/MgO structures on 3d metals for future applications in perpendicular magnetic devices.
引用
收藏
页数:7
相关论文
共 50 条
  • [21] Interfacial perpendicular magnetic anisotropy in CoFeB/MgO structure with various underlayers
    Oh, Young-Wan
    Lee, Kyeong-Dong
    Jeong, Jong-Ryul
    Park, Byong-Guk
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (17)
  • [22] A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
    Ikeda, S.
    Miura, K.
    Yamamoto, H.
    Mizunuma, K.
    Gan, H. D.
    Endo, M.
    Kanai, S.
    Hayakawa, J.
    Matsukura, F.
    Ohno, H.
    NATURE MATERIALS, 2010, 9 (09) : 721 - 724
  • [23] Effect of Ta thickness on the perpendicular magnetic anisotropy in MgO/CoFeB/Ta/[Co/Pd]n structures
    Chang, Yao-Jen
    Canizo-Cabrera, A.
    Garcia-Vazquez, Valentin
    Chang, Yang-Hua
    Wu, Te-ho
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (18)
  • [25] Ru Catalyst-Induced Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta/MgO Multilayered Films
    Liu, Yiwei
    Zhang, Jingyan
    Wang, Shouguo
    Jiang, Shaolong
    Liu, Qianqian
    Li, Xujing
    Wu, Zhenglong
    Yu, Guanghua
    ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (48) : 26643 - 26648
  • [26] Strong perpendicular magnetic anisotropy in an MgO/CoFeB/Pd unit structure with a thick CoFeB layer
    Jung, J. H.
    Lim, S. H.
    Lee, S. R.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (11)
  • [27] Study of CoFeB thickness and composition dependence in a modified CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction
    Zhu, M.
    Chong, H.
    Vu, Q. B.
    Brooks, R.
    Stamper, H.
    Bennett, S.
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (07)
  • [28] Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions
    Zhang, Yue
    Zhao, Weisheng
    Lakys, Yahya
    Klein, Jacques-Olivier
    Kim, Joo-Von
    Ravelosona, Dafine
    Chappert, Claude
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (03) : 819 - 826
  • [29] Superparamagnetic States and Perpendicular Magnetic Anisotropy in Ultrathin MgO/CoFeB/Ta Structures
    Tsai, C. C.
    Cheng, Chih-Wei
    Tsai, Meng-Chiau
    Chern, G.
    IEEE TRANSACTIONS ON MAGNETICS, 2014, 50 (01)
  • [30] Perpendicular Magnetic Anisotropy in MgO/CoFeB/Nb and a Comparison of the Cap Layer Effect
    Lee, Der-Sheng
    Chang, Hao-Ting
    Cheng, Chih-Wei
    Chern, Gung
    IEEE TRANSACTIONS ON MAGNETICS, 2014, 50 (07)