Research on High Efficiency Ge-Based Schottky Diode for Low-Power Microwave Power Transmission

被引：0
|
作者：
Wang, Ying [1 ]
Wang, Ce [2 ]
Dong, Shiwei [1 ]
Zhao, Weigang [1 ]
Su, Xinyu [1 ]
Duan, Chongdi [1 ]
机构：
[1] China Acad Space Technol Xian, Natl Key Lab Sci & Technol Space Microwave, Xian, Peoples R China
[2] Sichuan Univ, Coll Elect & Informat Engn, Chengdu, Peoples R China
来源：
PROCEEDINGS OF 2024 IEEE WIRELESS POWER TECHNOLOGY CONFERENCE AND EXPO, WPTCE | 2024年
关键词：
microwave power transmission; rectifying circuit; Schottky diode; conversion efficiency;
D O I：
10.1109/WPTCE59894.2024.10557298
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on the low turn-on voltage of GePb-based semiconductor materials, a Schottky diode for low-power microwave power transmission and energy harvesting is present in this paper, and the conversion efficiency of the rectifying circuit based on the SPICE model of this device is significantly improved under low input power, which will provide technological support for the development of the space solar power station, wireless sensor network and other technologies.
引用
收藏
页码：666 / 669
页数：4
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