A Novel Integration of Si Schottky Diode for mmWave CMOS, Low-Power SoCs, and More

被引：4

作者：

Trivedi, Vishal P. ^{[1
]}

John, Jay P. ^{[1
]}

To, Kun-Hin ^{[1
]}

Huang, W. Margaret ^{[1
]}

机构：

[1] Freescale Semicond Inc, Tempe, AZ 85284 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 03期

关键词：

Complementary metal-oxide-semiconductor (CMOS); millimeter wave (mmWave); Schottky; system on a chip (SoC); terahertz; BARRIER DIODES;

D O I：

10.1109/LED.2010.2099202

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel manufacturable integration of Si Schottky contact/diode using the standard W-contact process (instead of the standard silicide process) is demonstrated. Up to 4x smaller junction area is enabled. Schottky barrier diode with the novel integration shows the potential to replace the bipolar junction transistor/p-n diodes for low-voltage/low-power system-on-a-chip and memory applications and for electrostatic discharge. It is also viable for complementary metal-oxide-semiconductor millimeter-wave (30-300 GHz) designs per its 1-THz cutoff frequency.

引用

页码：258 / 260

页数：3

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