Optical and spin properties of localized and free excitons in GaBixAs1-x/GaAs multiple quantum wells

被引：12
|
作者：
Balanta, M. A. G. [1 ]
Kopaczek, J. [2 ]
Orsi Gordo, V. [1 ]
Santos, B. H. B. [1 ]
Rodrigues, A. D. [1 ]
Galeti, H. V. A. [3 ]
Richards, R. D. [4 ]
Bastiman, F. [4 ]
David, J. P. R. [4 ]
Kudrawiec, R. [2 ]
Galvao Gobato, Y. [1 ]
机构：
[1] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil
[2] Wroclaw Univ Technol, Fac Fundamental Problems Technol, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland
[3] Univ Fed Sao Carlos, Dept Engn Eletr, BR-13565905 Sao Carlos, SP, Brazil
[4] Univ Sheffield, Dept Elect & Elect Engn, Sir Frederick Mappin Bldg,Mappin St, Sheffield S1 3JD, S Yorkshire, England
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2016年 / 49卷 / 35期
基金：
英国工程与自然科学研究理事会; 巴西圣保罗研究基金会;
关键词：
photoluminescence; GaBiAs; spin; magneto-photoluminescence;
D O I：
10.1088/0022-3727/49/35/355104
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Raman spectroscopy and magneto-photoluminescence measurements under high magnetic fields were used to investigate the optical and spin properties of GaBiAs/GaAs multiple quantum wells (MQWs). An anomalous negative diamagnetic energy shift was observed at higher temperatures and higher laser intensities, which was associated to a sign inversion of hole effective mass in these structures. In addition, an enhancement of the polarization degree with decreasing of laser intensity was observed (experimental condition where the emission is dominated by localized excitons). This effect was explained by changes of spin relaxation and exciton recombination times due to exciton localization by disorder.
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页数：5
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