1.2 kV/400 A SiC Source Turn-Off MOSFET Intelligent Power Module

被引：0

作者：

Guo, Zhicheng ^{[1
,2
]}

Huang, Alex Q. ^{[3
]}

机构：

[1] Univ Texas Austin UT Austin, power Elect & power Syst, Austin, TX 78712 USA

[2] Arizona State Univ ASU, Tempe, AZ 85287 USA

[3] Virginia Polytech Inst & State Univ, Bradley Dept Elect & Comp Engn, Blacksburg, VA USA

来源：

IEEE POWER ELECTRONICS MAGAZINE | 2024年 / 11卷 / 02期

关键词：

Temperature sensors; Temperature measurement; MOSFET; Costs; Silicon carbide; Power supplies; Multichip modules;

D O I：

10.1109/MPEL.2024.3395069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Excellent switching performances and higher levels of integration are two critical topics for intelligent power modules (IPM). This article proposes a novel and cost effective 1.2 kV/400 A SiC half-bridge power module based on the Source Turn-off (STO) MOSFET. STO MOSFET is a driver integrated MOSFET architecture that can achieve ultra-fast turn-on and turn-off operations beyond the traditional voltage source gate driver approach. A built-in current and temperature monitoring features are also integrated. The IPM integrates discrete SiC devices, direct bond copper (DBC) base plate, STO gate driver, auxiliary power supply, current monitor, temperature monitor, and decoupling caps, making it plug-and-play ready.

引用

页码：34 / 38

页数：5

共 50 条

[21] Coordinated Switching with SiC MOSFET for Increasing Turn-off dV/dt of Si IGBT
Palmer, Patrick
Zhang, Xueqiang
Zhang, Jin
Findlay, Emma
Zhang, Tianqi
Shelton, Edward
2018 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2018, : 3517 - 3521
[22] Overcurrent turn-off robustness and stability of the switching behavior of SiC MOSFET body diodes
Palanisamya, Shanmuganathan
Basler, Thomas
Liu, Xing
Heimlanna, Clemens
Elpeltb, Rudolf
Sochorb, Paul
2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2022, : 257 - 260
[23] Junction Temperature Correction Method for SiC MOSFET Based on Turn-Off Oscillation Frequency of Drain-Source Voltage
Du, Mingxing
Liu, Fan
Yin, Jinliang
Dong, Chao
Ouyang, Ziwei
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (10) : 6208 - 6215
[24] Modeling and Simulation of SiC MOSFET Turn-off Oscillation under Influence of Parasitic Parameter
Ke, Junji
Zhao, Zhibin
Xie, Zongkui
Wei, Changjun
Sun, Peng
2017 IEEE SIXTH ASIA-PACIFIC CONFERENCE ON ANTENNAS AND PROPAGATION (APCAP), 2017,
[25] Robustness of 1.2 kV SiC MOSFET devices
Othman, D.
Lefebvre, S.
Berkani, M.
Khatir, Z.
Ibrahim, A.
Bouzourene, A.
MICROELECTRONICS RELIABILITY, 2013, 53 (9-11) : 1735 - 1738
[26] Development of Simulink Based Modeling Platform for 3.3kV/400A SiC MOSFET Power Module
Nawaz, Muhammad
Bezentes, Nikolaos
Iannuzzo, Francesco
Ilves, Kalle
2018 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2018, : 3547 - 3554
[27] Fabrication and Electrical Characteristics Research of Domestic 6.5 kV/400 A SiC MOSFET Module
Wei X.
Wu Z.
Tang X.
Du Y.
Yang F.
Li X.
Zhao Z.
Wu P.
Xu Y.
Qi L.
Li S.
Shan Y.
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, 2024, 44 (10): : 4012 - 4025
[28] 10kV SiC MOSFET split output power module
Beczkowski, Szymon
Li, Helong
Uhrenfeldt, Christian
Eni, Emanuel-Petre
Munk-Nielsen, Stig
2015 17TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'15 ECCE-EUROPE), 2015,
[29] Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices
Luo, Peng
Madathil, Sankara Narayanan Ekkanath
Nishizawa, Shin-Ichi
Saito, Wataru
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (03) : 3304 - 3311
[30] TURN-ON AND TURN-OFF CHARACTERISTICS OF A 4.5-KV 3000-A GATE TURN-OFF THYRISTOR
HASHIMOTO, O
KIRIHATA, H
WATANABE, M
NISHIURA, A
TAGAMI, S
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 1986, 22 (03) : 478 - 482

← 1 2 3 4 5 →