Analytical Current Model for Long-Channel Junctionless Double-Gate MOSFETs

被引：16
|
作者：
Lin, Xinnan [1 ]
Zhang, Baili [1 ]
Xiao, Ying [1 ]
Lou, Haijun [1 ]
Zhang, Lining [2 ]
Chan, Mansun [2 ]
机构：
[1] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Key Lab Integrated Microsyst, Shenzhen 518055, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 03期
关键词：
Circuit simulator; junctionless double-gate MOSFETs; Pao-Sah's dual integral; smooth transition; surface-potential-based model; FIELD-EFFECT TRANSISTORS; DRAIN-CURRENT MODEL; VOLTAGE;
D O I：
10.1109/TED.2016.2520558
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a SPICE compatible analytical surface-potential-based model for junctionless symmetric double-gate (JLDG) MOSFETs is described. By using the gradual-channel-approximation, the 1-D Poisson's equation is solved to obtain the surface and central potential in the JLDG MOSFET for long channel case. A continuous drain current model with smooth transitions from fully depleted region to partially depleted and accumulation regions is then derived from the Pao-Sah's dual integral as a function of the surface and central potential at the source and drain terminals. The model is verified and validated by numerical simulations over a wide range of doping concentrations and device geometries. The model has been implemented in a circuit simulator and used to simulate some circuit building blocks without any convergent problem.
引用
收藏
页码：959 / 965
页数：7
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