A 124-144 GHz Rectifier Achieving 22% RF-to-DC Conversion Efficiency in 22 nm FD-SOI CMOS Technology

被引：0

作者：

Kong, Xinyu ^{[1
]}

Ulusoy, Ahmet Cagri ^{[1
]}

机构：

[1] Karlsruhe Inst Technol KIT, Inst Radio Frequency Engn & Elect IHE, Karlsruhe, Germany

来源：

2024 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, IMS 2024 | 2024年

关键词：

6G; D-band; energy harvesting; wireless power transfer; FD-SOI; rectifiers;

D O I：

10.1109/IMS40175.2024.10600338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a high-efficiency D-band rectifier for 6G energy harvesting applications. We introduce and verify a systematic design methodology for switching rectifiers, and then use it to realize two prototypes in 22nm FD-SOI CMOS technology. By leveraging the back-gate biasing, a 5% enhancement in the power conversion efficiency (PCE) is demonstrated. The achieved peak PCE is 22% at 132 GHz with an input power of 7 dBm. It maintains its performance over a wide frequency range of more than 20 GHz. With a size of 0.0826 mm(2), the realized rectifier compares favorably to other state-of-the-art mm-wave rectifiers.

引用

页码：114 / 117

页数：4

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