A Low Insertion-Loss 10-110 GHz Digitally Tunable SPST Switch in 22 nm FD-SOI CMOS

被引：0

作者：

Ciocoveanu, Radu ^{[1
,2
]}

Weigel, Robert ^{[2
]}

Hagelauer, Amelie ^{[2
]}

Issakov, Vadim ^{[1
]}

机构：

[1] Infineon Technol AG, Neubiberg, Germany

[2] Friedrich Alexander Univ Erlangen Nuremberg FAU, Erlangen, Germany

来源：

2018 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS) | 2018年

关键词：

SPDT SWITCH;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper presents a wideband digitally tunable SPST switch based on the travelling-wave concept that has been realized in a 22 nm FD-SOI CMOS technology. The digital control for return loss is performed through mutual inductance switching. Small-signal measurement results show that the proposed SPST switch achieves a bandwidth of 10-110 GHz, with an insertion loss of 1.2 dB at 60 GHz and a 24 dB isolation at 60 GHz, whereas large-signal measurements show a 1-dB compression point of +7 dBm at 24 GHz. Furthermore, the 3 digital control bits allow tuning return loss center frequency by approximately 7 GHz. The chip core size is 0.12 mm x 0.15 mm.

引用

页码：122 / 125

页数：4

共 50 条

[1] 110 GHz Travelling-Wave Amplifier in 22 nm FD-SOI CMOS
Testa, Paolo Valerio
Fritsche, David
Schumann, Stefan
Finger, Wolfgang
Carta, Corrado
Ellinger, Frank
2017 IEEE ASIA PACIFIC MICROWAVE CONFERENCE (APMC), 2017, : 406 - 409
[2] SPST and SPDT 60 GHz Travelling-Wave Switches in 22 nm FD-SOI
Courte, Quentin
Rack, Martin
Lederer, Dimitri
Raskin, Jean-Pierre
2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC, 2023, : 313 - 316
[3] Low-Voltage Low-Distortion Sampling Switch Design in 22 nm FD-SOI CMOS Technology
Bora, Pragoti Pran
Borggreve, David
Vanselow, Frank
Isa, Erkan
Maurer, Linus
2017 24TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS), 2017, : 86 - 89
[4] A Compact DC-110GHz SPST Switch in 22nm FDSOI CMOS
Doan Nhut, Tan
Zito, Domenico
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2023, 70 (10) : 3812 - 3816
[5] A Fully-Differential Travelling-Wave Amplifier up to 110 GHz in a 22 nm FD-SOI CMOS Technology
Gatzastras, Athanasios
Volmer, Christian
Kallfass, Ingmar
2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC, 2023, : 365 - 368
[6] An Inductorless 60 GHz Down-Conversion Mixer in 22 nm FD-SOI CMOS Technology
Testa, P. V.
Riess, V.
Carta, C.
Ellinger, F.
2019 14TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2019), 2019, : 152 - 155
[7] A 140 GHz T/R Front-End Module in 22 nm FD-SOI CMOS
Tang, Xinyan
Johan Nguyen
Mangraviti, Giovanni
Zong, Zhiwei
Wambacq, Piet
2021 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2021, : 35 - 38
[8] Impact of Device Shunt Loss on DC-80 GHz SPDT in 22 nm FD-SOI
Rack, Martin
Nyssens, Lucas
Courte, Quentin
Lederer, Dimitri
Raskin, Jean-Pierre
IEEE 51ST EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2021), 2021, : 195 - 198
[9] PN Junctions Interface Passivation in 22 nm FD-SOI for Low-Loss Passives
Nyssens, L.
Rack, M.
Nabet, M.
Schwan, C.
Zhao, Z.
Lehmann, S.
Herrmann, T.
Henke, D.
Kondrat, A.
Soonekindt, C.
Koch, F.
Kache, T.
Kini, D. P.
Zimmerhackl, O.
Allibert, F.
Aulnette, C.
Lederer, D.
Raskin, J-P
2022 24TH INTERNATIONAL MICROWAVE AND RADAR CONFERENCE (MIKON), 2022,
[10] Design of an Ultra Compact Low Power 60 GHz Frequency Doubler in 22 nm FD-SOI
Cui, Mengqi
Carta, Corrado
Ellinger, Frank
2020 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2020, : 40 - 42

← 1 2 3 4 5 →