Protocol for thermal donors monitoring in high resistivity silicon wafers

被引：0

作者：

Abbadie, Alexandra ^{[1
]}

Desse, Alexandre ^{[1
]}

Melhem, Kassem ^{[1
]}

Mariani, Simone Dario ^{[2
]}

Fagiani, Davide ^{[2
]}

Zualiani, Paola ^{[2
]}

Faller, Frank ^{[3
]}

机构：

[1] STMicroelect Crolles Crolles, Crolles, France

[2] STMicroelect Italy, Agrate Brianza, Italy

[3] Siltronic AG, Burghausen, Germany

来源：

2024 35TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE, ASMC | 2024年

关键词：

Thermal Donors; high-resistivity silicon; thermal treatments; metrology;

D O I：

10.1109/ASMC61125.2024.10545501

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A monitoring protocol for 300mm high-resistivity Czochralski silicon (Cz-Si) wafers after optimized thermal treatments, is presented. It is based on the combination of several metrology techniques. Having such a methodology is important as oxygen-related defects called Thermal Donors (TD) formed during 450 degrees C anneals are electrically active in various types of substrates: n-type used typically in Insulated-Gate Bipolar Transistors (IGBT) and p-type used for example in Radiofrequency (RF)-based technologies. We show that such TDs result in resistivity loss, confirming their detrimental impact on devices performances.

引用

页数：6

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