Secure and Reliable Single-Ended 10T SRAM Cell

被引：0

作者：

Sharma, Ayan ^{[1
]}

Naz, Syed Farah ^{[2
]}

Shah, Ambika Prasad ^{[2
]}

机构：

[1] NIT Hamirpur, Hamirpur, India

[2] Indian Inst Technol Jammu, Jammu, India

来源：

8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024 | 2024年

关键词：

SRAM; Leakage Power Attack; Half-Select Issue; Critical Charge; Radiation Hardening;

D O I：

10.1109/EDTM58488.2024.10511397

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Several factors impact Static Random Access Memory performance, notably leakage current attack-based Side-Channel Attacks (SCA) and half-select issues. High radiation environments exacerbate memory cells vulnerable to soft errors. To address these concerns, we propose an SRAM resilient to SCA, half-select issues, and soft errors. Our observations reveal a significant increase-3.33x, 2.27x and 2.24x in overlap of leakage current distributions, critical charge, and Figure of Merit, respectively, compared to the Power Gated 9T SRAM cell.

引用

页码：574 / 576

页数：3

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