Secure and Reliable Single-Ended 10T SRAM Cell

被引：0

作者：

Sharma, Ayan ^{[1
]}

Naz, Syed Farah ^{[2
]}

Shah, Ambika Prasad ^{[2
]}

机构：

[1] NIT Hamirpur, Hamirpur, India

[2] Indian Inst Technol Jammu, Jammu, India

来源：

8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024 | 2024年

关键词：

SRAM; Leakage Power Attack; Half-Select Issue; Critical Charge; Radiation Hardening;

D O I：

10.1109/EDTM58488.2024.10511397

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Several factors impact Static Random Access Memory performance, notably leakage current attack-based Side-Channel Attacks (SCA) and half-select issues. High radiation environments exacerbate memory cells vulnerable to soft errors. To address these concerns, we propose an SRAM resilient to SCA, half-select issues, and soft errors. Our observations reveal a significant increase-3.33x, 2.27x and 2.24x in overlap of leakage current distributions, critical charge, and Figure of Merit, respectively, compared to the Power Gated 9T SRAM cell.

引用

页码：574 / 576

页数：3

共 50 条

[21] Design of highly reliable radiation hardened 10T SRAM cell for low voltage applications
Shekhar, Raghav
Kumar, Chaudhry Indra
[J]. INTEGRATION-THE VLSI JOURNAL, 2022, 87 : 176 - 181
[22] A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins
Abbasian, Erfan
Izadinasab, Farzaneh
Gholipour, Morteza
[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2022, 69 (04) : 1606 - 1616
[23] Low-power half-select free single-ended 10 transistor SRAM cell
Anubhav Sinha
Aminul Islam
[J]. Microsystem Technologies, 2017, 23 : 4133 - 4144
[24] Low-power half-select free single-ended 10 transistor SRAM cell
Sinha, Anubhav
Islam, Aminul
[J]. MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2017, 23 (09): : 4133 - 4144
[25] Energy Efficient Single-Ended 6-T SRAM for Multimedia Applications
Surana, Neelam
Mekie, Joycee
[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2019, 66 (06) : 1023 - 1027
[26] A SINGLE-ENDED READ DISTURB-FREE PPN BASED 9T SRAM CELL
Mansore, Shiv Ram
Gamad, Radheshyam
Mishra, Deepak Kumar
[J]. REVUE ROUMAINE DES SCIENCES TECHNIQUES-SERIE ELECTROTECHNIQUE ET ENERGETIQUE, 2018, 63 (03): : 295 - 299
[27] Low-Power 9T Subthreshold SRAM Cell with Single-Ended Write Scheme
Sinha, Anubhav
Kumar, Vikash
Islam, Aminul
[J]. 2015 ANNUAL IEEE INDIA CONFERENCE (INDICON), 2015,
[28] A CNTFET based stable, single-ended 7T SRAM cell with improved write operation
Sachdeva, Ashish
Sharma, Kulbhushan
Bhargava, Anuja
Abbasian, Erfan
[J]. PHYSICA SCRIPTA, 2024, 99 (03)
[29] Single-Ended 8T SRAM cell with high SNM and low power/energy consumption
Mohagheghi, Javad
Ebrahimi, Behzad
Torkzadeh, Pooya
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 2023, 110 (10) : 1733 - 1755
[30] Single Bit -Line 10T SRAM cell for Low power and High SNM
Banga, Himanshu
Agarwal, Dheeraj
[J]. 2017 INTERNATIONAL CONFERENCE ON RECENT INNOVATIONS IN SIGNAL PROCESSING AND EMBEDDED SYSTEMS (RISE), 2017, : 433 - 438

← 1 2 3 4 5 →