Characterization of InN Grown Directly on Sapphire Substrate Using Plasma-Enhanced Metal Organic Chemical Vapor Deposition

被引：1

作者：

Gotow, Takahiro ^{[1
,2
]}

Kumagai, Naoto ^{[1
,2
]}

Shimizu, Tetsuji ^{[1
,2
]}

Yamada, Hisashi ^{[1
,2
]}

Ide, Toshihide ^{[1
,2
]}

Maeda, Tatsuro ^{[3
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Inst Adv Elect & Photon, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

[2] Natl Inst Adv Ind Sci & Technol AIST NU, GaN Adv Device Open Innovat Lab, Furo cho,Chikusa ku, Nagoya 4648601, Japan

[3] Natl Inst Adv Ind Sci & Technol, Device Technol Res Inst, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2024年 / 59卷 / 07期

关键词：

InN; lattice mismatch; N-2 plasma irradiation; plasma-enhanced MOCVD; strain; EPITAXIAL-GROWTH; INDIUM NITRIDE; FILMS; TEMPERATURE; SURFACE; ENERGY;

D O I：

10.1002/crat.202400124

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Direct InN growth is demonstrated and characterized on a sapphire (Al2O3) substrate by plasma-enhanced metal-organic chemical vapor deposition using high-density nitrogen (N-2) microstrip-line microwave plasma. N-2 plasma irradiation at 650 degrees C for 20 min forms AlN on Al2O3 substrate. No peak regarding metallic In droplets is detected from InN/Al2O3 regardless of N-2 plasma irradiation. InN is found to be rotated 30 degrees with their a-axis oriented to become [10 (1) over bar0] InN // [11 (2) over bar0] Al2O3. The transition layers are confirmed at the InN/Al2O3 interface regardless of N-2 plasma irradiation. The surface of InN consisted of large undulations with root mean square values >30 nm, suggesting that strain relaxation introduces misfit dislocations.

引用

页数：6

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