TRIBOLOGICAL PROPERTIES OF DIAMOND FILMS GROWN BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：46

作者：

WONG, MS

MEILUNAS, R

ONG, TP

CHANG, RPH

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 20期

关键词：

D O I：

10.1063/1.101197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2006 / 2008

页数：3

共 50 条

[1] DEPOSITION OF SILVER FILMS BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 49 (06): : 691 - 696
[2] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN FILMS
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 75 - 77
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 48 (04): : 373 - 375
[4] PROPERTIES OF TITANIUM SILICIDE FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06): : 1332 - 1335
[5] HYDROGEN IN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION INSULATING FILMS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (08): : 1813 - 1817
[7] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION - REVIEW
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C262 - C263
[8] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN
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[J]. THIN SOLID FILMS, 1989, 170 (01) : 91 - 97
[9] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF MOLYBDENUM
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[J]. THIN SOLID FILMS, 1987, 147 (02) : 193 - 202
[10] STRESS MODIFICATION AND CHARACTERIZATION OF THIN SIC FILMS GROWN BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
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