Polyacrylonitrile as an Efficient Transfer Medium for Wafer-Scale Transfer of Graphene

被引:1
|
作者
Shang, Mingpeng [1 ,2 ,3 ]
Bu, Saiyu [4 ]
Hu, Zhaoning [3 ,4 ]
Zhao, Yixuan [2 ,3 ]
Liao, Junhao [1 ,2 ,3 ,5 ]
Zheng, Chunyang [1 ,2 ,3 ,6 ]
Liu, Wenlin [2 ,3 ]
Lu, Qi [3 ,7 ]
Li, Fangfang [1 ,3 ]
Wu, Haotian [4 ]
Shi, Zhuofeng [4 ,8 ]
Zhu, Yaqi [4 ,8 ]
Xu, Zhiying [4 ,9 ]
Guo, Bingbing [3 ]
Yu, Beiming [4 ]
Li, Chunhu [9 ]
Zhang, Xiaodong [8 ]
Xie, Qin [1 ,2 ,3 ]
Yin, Jianbo [3 ,6 ]
Jia, Kaicheng [3 ]
Peng, Hailin [1 ,2 ,3 ]
Lin, Li [1 ,3 ,4 ]
Liu, Zhongfan [2 ,3 ]
机构
[1] Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China
[2] Peking Univ, Beijing Natl Lab Mol Sci, Coll Chem & Mol Engn, Ctr Nanochem, Beijing 100871, Peoples R China
[3] Beijing Graphene Inst, Technol Innovat Ctr Graphene Metrol & Standardizat, Beijing 100095, Peoples R China
[4] Peking Univ, Sch Mat Sci & Engn, Beijing 100871, Peoples R China
[5] Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China
[6] Peking Univ, Sch Elect, Beijing 100871, Peoples R China
[7] China Univ Petr, Coll Sci, State Key Lab Heavy Oil Proc, Beijing 102249, Peoples R China
[8] Qingdao Univ, Coll Chem & Chem Engn, Qingdao 266000, Peoples R China
[9] Ocean Univ China, Coll Chem & Chem Engn, Lab Marine Chem Theory & Technol, Minist Educ, Qingdao 266100, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
carrier mobility; chemical vapor deposition; encapsulation; graphene single-crystalline wafer; graphene transfer; LARGE-AREA; 2-DIMENSIONAL MATERIALS; PHOTODETECTOR; STRAIN;
D O I
10.1002/adma.202402000
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The disparity between growth substrates and application-specific substrates can be mediated by reliable graphene transfer, the lack of which currently strongly hinders the graphene applications. Conventionally, the removal of soft polymers, that support the graphene during the transfer, would contaminate graphene surface, produce cracks, and leave unprotected graphene surface sensitive to airborne contaminations. In this work, it is found that polyacrylonitrile (PAN) can function as polymer medium for transferring wafer-size graphene, and encapsulating layer to deliver high-performance graphene devices. Therefore, PAN, that is compatible with device fabrication, does not need to be removed for subsequent applications. The crack-free transfer of 4 in. graphene onto SiO2/Si wafers, and the wafer-scale fabrication of graphene-based field-effect transistor arrays with no observed clear doping, uniformly high carrier mobility (approximate to 11 000 cm2 V-1 s-1), and long-term stability at room temperature, are achieved. This work presents new concept for designing the transfer process of 2D materials, in which multifunctional polymer can be retained, and offers a reliable method for fabricating wafer-scale devices of 2D materials with outstanding performance. Herein, by using polyacrylonitrile as the transfer medium and encapsulating layer, wafer-scale graphene transfer, devices fabrication, and efficient encapsulation against the airborne contaminations are successfully achieved, and the transferred graphene delivers improved electronic performances and long-term stability, offering a reliable method for fabricating wafer-scale devices of 2D materials with outstanding electronic quality. image
引用
收藏
页数:8
相关论文
共 50 条
  • [41] Graphene-assisted metal transfer printing for wafer-scale integration of metal electrodes and two-dimensional materials
    Liu, Guanyu
    Tian, Ziao
    Yang, Zhenyu
    Xue, Zhongying
    Zhang, Miao
    Hu, Xudong
    Wang, Yang
    Yang, Yuekun
    Chu, Paul K.
    Mei, Yongfeng
    Liao, Lei
    Hu, Weida
    Di, Zengfeng
    NATURE ELECTRONICS, 2022, 5 (05) : 275 - 280
  • [42] Graphene-assisted metal transfer printing for wafer-scale integration of metal electrodes and two-dimensional materials
    Guanyu Liu
    Ziao Tian
    Zhenyu Yang
    Zhongying Xue
    Miao Zhang
    Xudong Hu
    Yang Wang
    Yuekun Yang
    Paul K. Chu
    Yongfeng Mei
    Lei Liao
    Weida Hu
    Zengfeng Di
    Nature Electronics, 2022, 5 : 275 - 280
  • [43] Development toward Wafer-Scale Graphene RF Electronics
    Moon, J. S.
    Curtis, D.
    Hu, M.
    Wong, D.
    Campbell, P. M.
    Jernigan, G.
    Tedesco, J.
    VanMil, B.
    Myers-Ward, R.
    Eddy, C., Jr.
    Gaskill, D. K.
    Robinson, J.
    Fanton, M.
    Asbeck, P.
    GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, 2009, 19 (05): : 35 - 40
  • [44] Development toward Wafer-Scale Graphene RF Electronics
    Moon, J. S.
    Curtis, D.
    Hu, M.
    Wong, D.
    Campbell, P. M.
    Jernigan, G.
    Tedesco, J.
    VanMil, B.
    Myers-Ward, R.
    Eddy, C., Jr.
    Gaskill, D. K.
    Robinson, J.
    Fanton, M.
    Asbeck, P.
    2010 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, 2010, : 1 - +
  • [45] Wafer-scale epitaxial graphene on SiC for sensing applications
    Karlsson, Mikael
    Wang, Qin
    Zhao, Yichen
    Zhao, Wei
    Toprak, Muhammet S.
    Iakimov, Tihomir
    Ali, Amer
    Yakimova, Rositza
    Syvajarvi, Mikael
    Ivanov, Ivan G.
    MICRO+NANO MATERIALS, DEVICES, AND SYSTEMS, 2015, 9668
  • [46] Towards Wafer-Scale Monocrystalline Graphene Growth and Characterization
    Nguyen, Van Luan
    Lee, Young Hee
    SMALL, 2015, 11 (29) : 3512 - 3528
  • [47] Wafer-scale, stretchable nanomeshes from an ultrathin-support-layer assisted transfer
    Seo, Kyung Jin
    Han, Xun
    Qiang, Yi
    Zhao, Xuanyi
    Zhong, Yiding
    Shi, Zhan
    Fang, Hui
    APPLIED PHYSICS LETTERS, 2018, 112 (26)
  • [48] Wafer-Scale Fabrication and Transfer of Porous Silicon Films as Flexible Nanomaterials for Sensing Application
    Lu, Han
    Jin, Mingliang
    Zhang, Zongbao
    Wu, Sujuan
    Shui, Lingling
    NANOMATERIALS, 2022, 12 (07)
  • [49] A wafer-scale membrane transfer process for the fabrication of optical quality, large continuous membranes
    Yang, EH
    Wiberg, DV
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2003, 12 (06) : 804 - 815
  • [50] Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 °C for Device Mass Fabrication
    Qian, Fengsong
    Deng, Jun
    Dong, Yibo
    Xu, Chen
    Hu, Liangchen
    Fu, Guosheng
    Chang, Pengying
    Xie, Yiyang
    Sun, Jie
    ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (47) : 53174 - 53182