Development toward Wafer-Scale Graphene RF Electronics

被引：0

作者：

Moon, J. S. ^{[1
]}

Curtis, D. ^{[1
]}

Hu, M. ^{[1
]}

Wong, D. ^{[1
]}

Campbell, P. M. ^{[2
]}

Jernigan, G. ^{[2
]}

Tedesco, J. ^{[2
]}

VanMil, B. ^{[2
]}

Myers-Ward, R. ^{[2
]}

Eddy, C., Jr. ^{[2
]}

Gaskill, D. K. ^{[2
]}

Robinson, J. ^{[3
]}

Fanton, M. ^{[3
]}

Asbeck, P. ^{[4
]}

机构：

[1] HRL Labs LLC, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA

[2] Naval Res Lab, Washington, DC 20375 USA

[3] Penn State Univ, EOC, University Pk, PA 16802 USA

[4] Univ Calif San Diego, La Jolla, CA 92093 USA

来源：

2010 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS | 2010年

关键词：

Graphene; MOSFET; High-K dielectric;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We will present recent development of graphene FET technology on a wafer scale, including epitaxial graphene growth, device fabrication and characterization. The epitaxial growth of graphene on 2-inch wafers were fabricated via graphitization of Si-face SiC(0001) substrates. The sheet electron carrier density of these layers were typically 10(-13)/cm(2) at room temperature and had mobility of similar to 1500 cm(2) V-1S-1 or higher. Graphene FETs were fabricated with source and drain non-alloyed ohmic metal schemes. Metal gates were used on top of atomic-layer-deposited high-k (Al2O3) gate dielectric layer. DC and RF performance of the world's first epitaxial graphene RF FETs is presented.

引用

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页码：1 / +

页数：2

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