Development toward Wafer-Scale Graphene RF Electronics

We will present recent development of graphene FET technology on a wafer scale, including epitaxial graphene growth, device fabrication and characterization. The epitaxial growth of graphene on 2-inch wafers were fabricated via graphitization of Si-face SiC(0001) substrates. The sheet electron carrier density of these layers were typically 10(-13)/cm(2) at room temperature and had mobility of similar to 1500 cm(2) V-1S-1 or higher. Graphene FETs were fabricated with source and drain non-alloyed ohmic metal schemes. Metal gates were used on top of atomic-layer-deposited high-k (Al2O3) gate dielectric layer. DC and RF performance of the world's first epitaxial graphene RF FETs is presented.